Datasheet > PESD4V0Y1BBSF

PESD4V0Y1BBSF

更新时间： 2024-11-03 11:13:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	151K
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PESD4V0Y1BBSF 数据手册

PESD4V0Y1BBSF

Extremely low clamping bidirectional ESD protection diode

23 August 2022

Short data sheet

1. General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the

TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless ultra small

Surface-Mounted Device (SMD) package designed to protect one signal line from the damage

caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

V_RWM= 4 V device

Very low diode capacitance C_d= 0.7 pF typical

Extremely low clamping and trigger voltage (6.7 V TLP) to protect sensitive I/Os

Extremely low inductance protection path to ground

ESD protection up to ±30 kV according to IEC 61000-4-2

IEC 61000-4-5 (surge): I_PP= 25 A peak pulse (average measured)

Ultra small, very low inductance SMD package

Exceeds IEC 61000-4-4 level 4 for I/O data lines, meets IEC 61000-4-4 level 4 for power supply

ports (corresponds to 80 A into a 50 Ohm termination)

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

USB3.2 and USB2.0 data lines, SD-card data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

-4

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.7

0.84

12 3 4 5 6 7

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