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PESD5V0F1BRLD

更新时间: 2024-11-09 11:13:43
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安世 - NEXPERIA /
页数 文件大小 规格书
11页 1022K
描述
Femtofarad bidirectional ESD protection diodeProduction

PESD5V0F1BRLD 数据手册

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PESD5V0F1BRLD  
Femtofarad bidirectional ESD protection diode  
Rev. 1 — 30 January 2014  
Product data sheet  
1. Product profile  
1.1 General description  
Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to  
protect one signal line from the damage caused by ESD and other transients. The device  
is encapsulated in a leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted  
Device (SMD) plastic package with visible and solderable side pads.  
The combination of extremely low capacitance, high ESD maximum rating and ultra small  
package makes the device ideal for high-speed data line protection and antenna  
protection applications.  
1.2 Features and benefits  
Bidirectional ESD protection of one line ESD protection up to 10 kV (contact)  
and 15 kV (air)  
Femtofarad capacitance: Cd = 400 fF  
IEC 61000-4-2; level 4 (ESD)  
Package height typ. 0.37 mm  
Low ESD clamping voltage: 30 V  
at 30 ns and 8 kV  
Very low leakage current: IRM < 1 nA  
AEC-Q101 qualified  
1.3 Applications  
10/100/1000 Mbit/s Ethernet  
FireWire  
Portable electronics  
Communication systems  
Computers and peripherals  
Audio and video equipment  
Antenna protection  
High-speed data lines  
SIM card protection  
Cellular handsets and accessories  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Per device  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
-
5.5  
V
f = 1 MHz; VR = 0 V  
0.4  
0.55  
pF  

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