Datasheet > PESD5V0F1BRLD-Q

PESD5V0F1BRLD-Q

更新时间： 2024-09-21 11:11:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	248K
描述
Femtofarad bidirectional ESD protection diodeProduction

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PESD5V0F1BRLD-Q 数据手册

PESD5V0F1BRLD-Q

Femtofarad bidirectional ESD protection diode

4 October 2022

Product data sheet

1. General description

Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one

signal line from the damage caused by ESD and other transients. The device is encapsulated in a

leadless ultra small DFN1006D-2 (SOD882D) Surface-Mounted Device (SMD) plastic package with

visible and solderable side pads.

The combination of extremely low capacitance, high ESD maximum rating and ultra small package

makes the device ideal for high-speed data line protection and antenna protection applications.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Femtofarad capacitance: C_d= 400 fF

Low ESD clamping voltage: 30 V at 30 ns and ±8 kV

Very low leakage current: I_RM= 1 nA

ESD protection up to 10 kV (contact) and 15 kV (air)

IEC 61000-4-2; level 4 (ESD)

Package height typ. 0.37 mm

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

10/100/1000 Mbit/s Ethernet

High-speed data lines

SIM card protection

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

Audio and video equipment

Antenna protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

5.5

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.4

0.55

12 3 4 5 6 7...11

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