Datasheet > PESD5V0F1BL-Q

PESD5V0F1BL-Q

更新时间： 2024-09-21 11:10:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	241K
描述
Femtofarad bidirectional ESD protection diodeProduction

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PESD5V0F1BL-Q 数据手册

PESD5V0F1BL-Q

Femtofarad bidirectional ESD protection diode

10 June 2022

Product data sheet

1. General description

Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless ultra small

SOD882 Surface-Mounted Device (SMD) plastic package designed to protect one signal line from

the damage caused by ESD and other transients. The combination of extremely low capacitance,

high ESD maximum rating and ultra small package makes the device ideal for high-speed data line

protection and antenna protection applications.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Femtofarad capacitance: C_d= 400 fF

Low ESD clamping voltage: 30 V at 30 ns and ± 8 kV

Very low leakage current: I_RM< 1 nA

ESD protection up to 10 kV

IEC 61000-4-2; level 4 (ESD)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

10/100/1000 Mbit/s Ethernet

Portable electronics

FireWire

Communication systems

High-speed data lines

Computers and peripherals

Subscriber Identity Module (SIM) card protection

Audio and video equipment

Cellular handsets and accessories

Antenna protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

5.5

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.4

0.55

12 3 4 5 6 7...11

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