Datasheet > PESD4V0X2UM

PESD4V0X2UM

更新时间： 2024-11-03 11:11:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	649K
描述
Extremely low capacitance unidirectional ESD protection diode arrayProduction

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PESD4V0X2UM 数据手册

PESD4V0X2UM

Extremely low capacitance unidirectional ESD protection

diode array

14 September 2022

Product data sheet

1. General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode array, part

of the TrEOS protection family. This device is housed in a DFN1006-3 (SOT883-3) leadless ultra

small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines

from the damage caused by ESD and other transients.

2. Features and benefits

•

Unidirectional ESD protection of one line pair

•

V_RWM= 4 V device

Extremely high surge robustness of 11.5 A for a 8/20 µs pulse

Extremely low diode capacitance, C_d= 0.82 pF typical

Extremely low clamping voltage to protect sensitive I/Os

ESD protection up to ±20 kV according to IEC 61000-4-2

Leadless ultra small SOT883-3 surface mount package

IEC 61000-4-4 robust up to level 4 for I/O data lines (corresponds to 40 A into a 50 Ohm

termination)

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

USB2.0 data lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

[1]

0.82

0.98

[1] Measured from pin 1 or 2 to pin 3.

12 3 4 5 6 7...13

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