Datasheet > PESD4V0W1BCSF

PESD4V0W1BCSF

更新时间： 2024-11-03 11:13:15

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
16页	1417K
描述
Extremely low capacitance bidirectional ESD protection diodeProduction

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PESD4V0W1BCSF 数据手册

PESD4V0W1BCSF

Extremely low capacitance bidirectional ESD protection

diode

28 September 2021

Product data sheet

1. General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the

TrEOS protection family . The device is housed in a DSN0603-2 (SOD962-2) leadless ultra small

Surface-Mounted Device (SMD) package designed to protect one signal line from the damage

caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Surge robustness I_PPM= 20 A according to IEC 61000-4-5

Extremely low diode capacitance C_d= 0.5 pF

Extremely low clamping to protect sensitive I/Os

Extremely low-inductance protection path to ground

ESD protection up to ± 30 kV according to IEC 61000-4-2

Ultra small SMD package

3. Applications

•

USB3.2 and HDMI2.0 data lines

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

4. Quick reference data

Table 1. Quick reference data

Symbol

C_d

Parameter

Conditions

Min

Typ

0.55

Max

0.65

Unit

diode capacitance

f = 1 MHz; V_R= 0 V

V_RWM

reverse standoff

voltage

12 3 4 5 6 7...16

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