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PESD3V3X1BL

更新时间: 2024-11-02 10:14:19
品牌 Logo 应用领域
恩智浦 - NXP 瞬态抑制器二极管局域网
页数 文件大小 规格书
11页 85K
描述
Ultra low capacitance bidirectional ESD protection diode

PESD3V3X1BL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DFN
包装说明:1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.67
Is Samacsys:N最大击穿电压:7.8 V
最小击穿电压:5 V击穿电压标称值:6.3 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PBCC-N2
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:3.3 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:30Base Number Matches:1

PESD3V3X1BL 数据手册

 浏览型号PESD3V3X1BL的Datasheet PDF文件第2页浏览型号PESD3V3X1BL的Datasheet PDF文件第3页浏览型号PESD3V3X1BL的Datasheet PDF文件第4页浏览型号PESD3V3X1BL的Datasheet PDF文件第5页浏览型号PESD3V3X1BL的Datasheet PDF文件第6页浏览型号PESD3V3X1BL的Datasheet PDF文件第7页 
PESD3V3X1BL  
Ultra low capacitance bidirectional ESD protection diode  
Rev. 01 — 6 January 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a  
leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect  
one signal line from the damage caused by ESD and other transients.  
1.2 Features  
I Bidirectional ESD protection of one line I ESD protection up to 9 kV  
I Ultra low diode capacitance: Cd = 1.3 pF I IEC 61000-4-2; level 4 (ESD)  
I Very low leakage current: IRM = 1 nA  
I AEC-Q101 qualified  
1.3 Applications  
I USB interfaces  
I Cellular handsets and accessories  
I Portable electronics  
I Antenna protection  
I 10/100/1000 Mbit/s Ethernet  
I FireWire  
I Communication systems  
I Computers and peripherals  
I Audio and video equipment  
I High-speed data lines  
I Subscriber Identity Module (SIM) card  
protection  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Per diode  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
-
3.3  
1.6  
V
f = 1 MHz; VR = 0 V  
1.3  
pF  

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