Datasheet > PESD3V3Z1BSF

PESD3V3Z1BSF

更新时间： 2024-09-21 11:14:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	520K
描述
Extremely low capacitance bidirectional ESD protection diodeProduction

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PESD3V3Z1BSF 数据手册

PESD3V3Z1BSF

Extremely low capacitance bidirectional ESD protection

diode

2 March 2021

Product data sheet

1. General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, which is

part of the TrEOS protection family. The device is housed in a DSN0603-2 (SOD962-2) leadless

ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from

damage caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Extremely low diode capacitance C_d= 0.28 pF

Extremely low clamping voltage to protect sensitive I/Os

Extremely low inductance protection path to ground

ESD protection up to 20 kV according to IEC 61000-4-2

Ultra small SMD package

9.5 A maximum 8/20 μs peak pulse current

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

3.3

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.28

0.35

12 3 4 5 6 7...15

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