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PESD3V6Z1BCSF PDF预览

PESD3V6Z1BCSF

更新时间: 2024-11-03 11:11:27
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
16页 694K
描述
Extremely low capacitance bidirectional ESD protection diodeProduction

PESD3V6Z1BCSF 数据手册

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PESD3V6Z1BCSF  
Extremely low capacitance bidirectional ESD protection  
diode  
2 March 2021  
Product data sheet  
1. General description  
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the  
TrEOS protection family . The device is housed in a DSN0603-2 (SOD962-2) leadless ultra small  
Surface-Mounted Device (SMD) package designed to protect one signal line from the damage  
caused by ESD and other transients.  
2. Features and benefits  
Bidirectional ESD protection of one line  
Extremely low diode capacitance Cd = 0.45 pF  
Extremely low clamping to protect sensitive I/Os  
Extremely low-inductance protection path to ground  
ESD protection up to ± 30 kV according to IEC 61000-4-2  
Surge robustness IPPM = 15 A according to IEC 61000-4-5  
Ultra small SMD package  
3. Applications  
Cellular handsets and accessories  
Portable electronics  
Communication systems  
Computers and peripherals  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Cd  
Parameter  
Conditions  
Min  
Typ  
0.45  
-
Max  
0.6  
Unit  
pF  
V
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
-
VRWM  
reverse standoff  
voltage  
3.6  
 
 
 
 

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