Datasheet > PESD42VS2UT-Q

PESD42VS2UT-Q

更新时间： 2024-11-03 11:11:11

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安世 - NEXPERIA		/
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描述
Double ESD protection diode arrayProduction

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PESD42VS2UT-Q 数据手册

PESD42VS2UT-Q

Double ESD protection diode array

23 September 2022

Product data sheet

1. General description

Unidirectional double ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB)

small Surface-Mounted Device (SMD) plastic package, designed to protect up to two signal lines

from the damage caused by ESD and other transients.

2. Features and benefits

•

Unidirectional ESD protection of two lines

•

High reverse standoff voltage: V_RWM= 42 V

Low leakage current: I_RM≤ 50 nA

ESD protection up to 23 kV

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

ESD protection for standard capacitance signals or supply lines

4. Quick reference data

Table 1. Quick reference data

Symbol

Per diode

V_RWM

Parameter

Conditions

Min

Typ

Max

Unit

reverse standoff

voltage

T_amb= 25 °C

t_p= 8/20 µs

1.8

I_PPM

V_CL

rated peak pulse

current

[1]

clamping voltage

I_PPM= 1.8 A; t_p= 8/20 µs; T_amb= 25 °C [2] [1]

[1] Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.

[2] Measured from pin 1 or 2 to pin 3.

12 3 4 5 6 7...12

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