5秒后页面跳转
PESD3V3U1UT PDF预览

PESD3V3U1UT

更新时间: 2024-09-19 22:16:43
品牌 Logo 应用领域
恩智浦 - NXP 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
13页 103K
描述
Ultra low capacitance ESD protection diode in SOT23 package

PESD3V3U1UT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.43
最大击穿电压:6.9 V最小击穿电压:5.8 V
击穿电压标称值:6.4 V最大钳位电压:20 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:80 W
元件数量:2端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:3.3 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

PESD3V3U1UT 数据手册

 浏览型号PESD3V3U1UT的Datasheet PDF文件第2页浏览型号PESD3V3U1UT的Datasheet PDF文件第3页浏览型号PESD3V3U1UT的Datasheet PDF文件第4页浏览型号PESD3V3U1UT的Datasheet PDF文件第5页浏览型号PESD3V3U1UT的Datasheet PDF文件第6页浏览型号PESD3V3U1UT的Datasheet PDF文件第7页 
PESDxU1UT series  
Ultra low capacitance ESD protection diode in SOT23 package  
Rev. 01 — 11 May 2005  
Product data sheet  
1. Product profile  
1.1 General description  
Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23  
(TO-236AB) small SMD plastic package designed to protect one high-speed data line  
from the damage caused by ESD and other transients.  
1.2 Features  
Unidirectional ESD protection of one line ESD protection > 23 kV  
Ultra low diode capacitance: Cd = 0.6 pF IEC 61000-4-2; level 4 (ESD)  
Max. peak pulse power: PPP up to 200 W IEC 61000-4-5; (surge)  
Low clamping voltage  
1.3 Applications  
10/100/1000 Ethernet  
FireWire  
Communication systems  
Local Area Network (LAN) equipment  
Computers and peripherals  
High-speed datalines  
1.4 Quick reference data  
Table 1:  
Symbol Parameter  
VRWM reverse stand-off voltage  
Quick reference data  
Conditions  
Min  
Typ  
Max  
Unit  
PESD3V3U1UT  
PESD5V0U1UT  
PESD12VU1UT  
PESD15VU1UT  
PESD24VU1UT  
diode capacitance  
-
-
-
-
-
-
-
3.3  
5.0  
12  
V
-
V
-
V
-
15  
V
-
24  
V
[1]  
Cd  
f = 1 MHz; VR = 0 V  
0.6  
1.5  
pF  
[1] Measured from pin 1 to 2  

PESD3V3U1UT 替代型号

型号 品牌 替代类型 描述 数据表
PESD3V3U1UT,215 NXP

功能相似

PESDxU1UT series - Ultra low capacitance ESD protection diode in SOT23 package TO-236 3-Pi

与PESD3V3U1UT相关器件

型号 品牌 获取价格 描述 数据表
PESD3V3U1UT,215 NXP

获取价格

PESDxU1UT series - Ultra low capacitance ESD protection diode in SOT23 package TO-236 3-Pi
PESD3V3U1UT,235 NXP

获取价格

DIODE 80 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE, TO-236AB, PLASTIC PACKAGE-3, Tr
PESD3V3V1BCSF NEXPERIA

获取价格

Ultra low clamping bidirectional ESD protection diodeProduction
PESD3V3V1BCSF UMW

获取价格

ESD/TVS 管
PESD3V3V1BL NEXPERIA

获取价格

Low capacitance bidirectional ESD protection diodeProduction
PESD3V3V4UF NXP

获取价格

Very low capacitance unidirectional quadruple ESD protection diode arrays
PESD3V3V4UG NXP

获取价格

Very low capacitance quadruple ESD protection diode arrays in SOT353 package
PESD3V3V4UG,115 NXP

获取价格

PESDxV4UF; PESDxV4UG; PESDxV4UW - Very low capacitance unidirectional quadruple ESD protec
PESD3V3V4UGT/R NXP

获取价格

TRANSIENT SUPPRESSOR DIODE ARRAY,UNIDIRECTIONAL,3.3V V(RWM),SOT-353
PESD3V3V4UW NXP

获取价格

Very low capacitance quadruple ESD protection diode arrays in SOT665 package