5秒后页面跳转
PESD3V3V4UG PDF预览

PESD3V3V4UG

更新时间: 2024-11-07 22:44:27
品牌 Logo 应用领域
恩智浦 - NXP 二极管光电二极管局域网
页数 文件大小 规格书
11页 74K
描述
Very low capacitance quadruple ESD protection diode arrays in SOT353 package

PESD3V3V4UG 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SC-88包装说明:PLASTIC, SMD, SC-88, 5 PIN
针数:5Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.43最大击穿电压:5.9 V
最小击穿电压:5.3 V击穿电压标称值:5.6 V
最大钳位电压:11 V配置:COMMON ANODE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G5JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:16 W
元件数量:4端子数量:5
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:3.3 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

PESD3V3V4UG 数据手册

 浏览型号PESD3V3V4UG的Datasheet PDF文件第2页浏览型号PESD3V3V4UG的Datasheet PDF文件第3页浏览型号PESD3V3V4UG的Datasheet PDF文件第4页浏览型号PESD3V3V4UG的Datasheet PDF文件第5页浏览型号PESD3V3V4UG的Datasheet PDF文件第6页浏览型号PESD3V3V4UG的Datasheet PDF文件第7页 
PESDxV4UG series  
Very low capacitance quadruple ESD protection diode arrays  
in SOT353 package  
Rev. 02 — 7 April 2005  
Product data sheet  
1. Product profile  
1.1 General description  
Very low capacitance quadruple ElectroStatic Discharge (ESD) protection diode arrays in  
very small SOT353 (SC-88A) plastic package designed to protect up to four signal lines  
from the damage caused by ESD and other transients.  
1.2 Features  
ESD protection of up to four lines  
Very low diode capacitance  
Low clamping voltage  
Ultra low leakage current: IRM = 3 nA  
ESD protection up to 12 kV  
IEC 61000-4-2; level 4 (ESD)  
1.3 Applications  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
Communication systems  
Portable electronics  
Subscriber Identity Module (SIM) card  
protection  
1.4 Quick reference data  
Table 1:  
Symbol  
VRWM  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
reverse stand-off voltage  
PESD3V3V4UG  
-
-
-
-
3.3  
5.0  
V
V
PESD5V0V4UG  
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V;  
see Figure 5  
PESD3V3V4UG  
PESD5V0V4UG  
-
-
15  
12  
18  
15  
pF  
pF  

与PESD3V3V4UG相关器件

型号 品牌 获取价格 描述 数据表
PESD3V3V4UG,115 NXP

获取价格

PESDxV4UF; PESDxV4UG; PESDxV4UW - Very low capacitance unidirectional quadruple ESD protec
PESD3V3V4UGT/R NXP

获取价格

TRANSIENT SUPPRESSOR DIODE ARRAY,UNIDIRECTIONAL,3.3V V(RWM),SOT-353
PESD3V3V4UW NXP

获取价格

Very low capacitance quadruple ESD protection diode arrays in SOT665 package
PESD3V3V4UW NEXPERIA

获取价格

Very low capacitance unidirectional quadruple ESD protection diode arraysProduction
PESD3V3V4UW,115 NXP

获取价格

PESDxV4UF; PESDxV4UG; PESDxV4UW - Very low capacitance unidirectional quadruple ESD protec
PESD3V3W1BCSF NEXPERIA

获取价格

Extremely low capacitance bidirectional ESD protection diodeProduction
PESD3V3X1BCSF NEXPERIA

获取价格

Ultra low capacitance bidirectional ESD protection diodeProduction
PESD3V3X1BL NXP

获取价格

Ultra low capacitance bidirectional ESD protection diode
PESD3V3X1BL NEXPERIA

获取价格

Ultra low capacitance bidirectional ESD protection diodeProduction
PESD3V3X2UT NEXPERIA

获取价格

ESD protection diodeProduction