Datasheet > PESD3V3V1BCSF

PESD3V3V1BCSF

更新时间： 2024-09-21 11:10:07

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	237K
描述
Ultra low clamping bidirectional ESD protection diodeProduction

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PESD3V3V1BCSF 数据手册

PESD3V3V1BCSF

Ultra low clamping bidirectional ESD protection diode

8 April 2021

Product data sheet

1. General description

Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DSN0603-2

(SOD962) leadless ultra small Surface-Mounted Device (SMD) package. The device is designed to

protect one signal line from the damage caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Ultra small leadless package with a height of 0.3 mm

IEC 61000-4-5 (surge); I_PPM= 8.3 A (average measured)

Very low clamping voltage: V_CL= 8.9 V max for 7.1 A, 8/20 μs pulse

Ultra low leakage current: I_RM< 1 nA

ESD protection up to 27 kV

3. Applications

ESD and surge protection for:

•

very sensitive interface lines

generic interface lines

in portable electronics, communication, consumer and computing devices.

4. Quick reference data

Table 1. Quick reference data

Symbol

C_d

Parameter

Conditions

Min

Typ

8.5

Max

Unit

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

t_p= 8/20 µs

I_PPM

rated peak pulse

current

[1] [2]

7.1

V_RWM

reverse standoff

voltage

T_amb= 25 °C

3.3

[1] According to IEC 61000-4-5.

[2] Average measured I_PPM= 8.3 A.

12 3 4 5 6 7...10

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