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PESD3V3S2UT PDF预览

PESD3V3S2UT

更新时间: 2024-11-15 11:11:27
品牌 Logo 应用领域
安世 - NEXPERIA 局域网PC光电二极管
页数 文件大小 规格书
12页 241K
描述
Double ESD protection diodeProduction

PESD3V3S2UT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.75Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:854633
Samacsys Pin Count:3Samacsys Part Category:Diode
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:SOT23
Samacsys Released Date:2020-05-19 09:20:57Is Samacsys:N
最大击穿电压:6 V最小击穿电压:5.2 V
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:330 W
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL参考标准:IEC-60134; IEC-61000-4-2; IEC-61000-4-5
最大重复峰值反向电压:3.3 V表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

PESD3V3S2UT 数据手册

 浏览型号PESD3V3S2UT的Datasheet PDF文件第2页浏览型号PESD3V3S2UT的Datasheet PDF文件第3页浏览型号PESD3V3S2UT的Datasheet PDF文件第4页浏览型号PESD3V3S2UT的Datasheet PDF文件第5页浏览型号PESD3V3S2UT的Datasheet PDF文件第6页浏览型号PESD3V3S2UT的Datasheet PDF文件第7页 
PESD3V3S2UT  
Double ESD protection diode  
11 April 2023  
Product data sheet  
1. General description  
Uni-directional double ESD protection diode in a SOT23 plastic package. Designed to protect up to  
two transmission or data lines from ElectroStatic Discharge (ESD) damage.  
2. Features and benefits  
Uni-directional ESD protection of up to two lines  
Max. peak pulse power: Ppp = 330 W at tp = 8/20 us  
Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A  
Ultra-low reverse leakage current: IRM < 700 nA  
ESD protection > 30 kV  
IEC 61000-4-2; level 4 (ESD)  
IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 us.  
3. Applications  
Computers and peripherals  
Communication systems  
Audio and video equipment  
High speed data lines  
Parallel ports  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
[1]  
[1]  
-
-
3.3  
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
207  
300  
pF  
[1] Measured from pin 1 or 2 to pin 3.  
 
 
 
 
 

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