Datasheet > PESD3V3S2UT-Q

PESD3V3S2UT-Q

更新时间： 2024-09-21 11:12:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	240K
描述
Double ESD protection diodeProduction

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PESD3V3S2UT-Q 数据手册

PESD3V3S2UT-Q

Double ESD protection diode

10 June 2022

Product data sheet

1. General description

Uni-directional double ESD protection diode in a SOT23 plastic package. Designed to protect up to

two transmission or data lines from ElectroStatic Discharge (ESD) damage.

2. Features and benefits

•

Uni-directional ESD protection of up to two lines

•

Max. peak pulse power: P_pp= 330 W at t_p= 8/20 us

Low clamping voltage: V_(CL)R= 20 V at I_pp= 18 A

Ultra-low reverse leakage current: I_RM< 700 nA

ESD protection > 30 kV

IEC 61000-4-2; level 4 (ESD)

IEC 61000-4-5 (surge); I_pp= 18 A at t_p= 8/20 us.

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Computers and peripherals

Communication systems

Audio and video equipment

High speed data lines

Parallel ports

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

[1]

3.3

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

207

300

[1] Measured from pin 1 or 2 to pin 3.

12 3 4 5 6 7...12

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