Datasheet > PESD3V3S1BSF

PESD3V3S1BSF

更新时间： 2024-09-27 11:13:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	200K
描述
Ultra low clamping bidirectional ESD protection diodeProduction

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PESD3V3S1BSF

Ultra low clamping bidirectional ESD protection diode

5 November 2020

Product data sheet

1. General description

Ultra low clamping bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect

one signal line from the damage caused by ESD and other transients. The device is housed in a

leadless ultra small DSN0603-2 (SOD962) Surface-Mounted Device (SMD) package.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Ultra small leadless package with a height of 0.3 mm

IEC 61000-4-5 (surge), I_PPM= 12 A

Very low clamping voltage: V_CL= 5.8 V typical at 16 A for TLP pulse

Ultra low leakage current: I_RM= 1 nA

ESD protection up to 30 kV

3. Applications

ESD surge protection for:

•

Very sensitive interface lines

Generic interface lines

in portable electronics, communication, consumer and computing devices.

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

3.3

I_PPM

V_CL

rated peak pulse

current

t_p= 8/20 μs; T_amb= 25 °C

[1]

clamping voltage

I_PPM= 12 A; t_p= 8/20 µs; T_amb= 25 °C [1]

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

12 3 4 5 6 7...12

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