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PESD3V3L4BHC

更新时间: 2024-11-22 11:11:43
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安世 - NEXPERIA /
页数 文件大小 规格书
11页 284K
描述
4-fold bidirectional ESD protection arrayProduction

PESD3V3L4BHC 数据手册

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PESD3V3L4BHC  
4-fold bidirectional ESD protection array  
7 June 2019  
Product data sheet  
1. General description  
4-fold bidirectional ElectroStatic Discharge (ESD) protection array designed to protect up to four  
lines from the damage caused by ESD and other transients.  
The device is housed in a leadless extremely thin small DFN1308-6 (SOT8006) Surface-Mounted  
Device (SMD) plastic package.  
2. Features and benefits  
Bidirectional ESD protection of up to 4 lines  
Very high surge robustness; IPP = 6 A for 8/20 µs pulse  
Very low clamping voltage: VCL = 7.3 V typ. for 6 A 8/20 µs pulse  
ESD protection up to 20 kV  
Very low dynamic resistance Rdyn = 0.2 Ω (TLP)  
3. Applications  
ESD protection for low-speed lines in portable communication, consumer devices and computing  
devices.  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
3.3  
V
IPPM  
Vt1  
rated peak pulse  
current  
tp = 8/20 µs; Tamb = 25 °C  
Tamb = 25 °C  
[1]  
-
-
-
6
-
A
V
trigger voltage  
6.7  
[1] Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.  
 
 
 
 
 

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