Datasheet > PESD3V3L4BHC

PESD3V3L4BHC

更新时间： 2024-09-27 11:11:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	284K
描述
4-fold bidirectional ESD protection arrayProduction

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PESD3V3L4BHC

4-fold bidirectional ESD protection array

7 June 2019

Product data sheet

1. General description

4-fold bidirectional ElectroStatic Discharge (ESD) protection array designed to protect up to four

lines from the damage caused by ESD and other transients.

The device is housed in a leadless extremely thin small DFN1308-6 (SOT8006) Surface-Mounted

Device (SMD) plastic package.

2. Features and benefits

•

Bidirectional ESD protection of up to 4 lines

•

Very high surge robustness; I_PP= 6 A for 8/20 µs pulse

Very low clamping voltage: V_CL= 7.3 V typ. for 6 A 8/20 µs pulse

ESD protection up to 20 kV

Very low dynamic resistance R_dyn= 0.2 Ω (TLP)

3. Applications

ESD protection for low-speed lines in portable communication, consumer devices and computing

devices.

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

3.3

I_PPM

V_t1

rated peak pulse

current

t_p= 8/20 µs; T_amb= 25 °C

T_amb= 25 °C

[1]

trigger voltage

6.7

[1] Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.

12 3 4 5 6 7...11

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