Datasheet > PESD3V3NW-SF

PESD3V3NW-SF

更新时间： 2024-09-27 11:14:27

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	231K
描述
Extremely low capacitance bidirectional ESD protectionProduction

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PESD3V3NW-SF 数据手册

PESD3V3NW-SF

Extremely low capacitance bidirectional ESD protection

3 March 2021

Product data sheet

1. General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the

TrEOS protection family . The device is housed in a DSN0603-2 (SOD962-2) leadless ultra small

Surface-Mounted Device (SMD) package designed to protect one signal line from the damage

caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Surge robustness I_PPM= 20 A according to IEC 61000-4-5

Extremely low diode capacitance C_d= 1.2 pF max.

Extremely low clamping to protect sensitive I/Os

Extremely low-inductance protection path to ground

ESD protection up to ± 30 kV according to IEC 61000-4-2

Ultra small SMD package

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

3.3

C_d

diode capacitance

f = 1 MHz; V_R= 0 V

0.6

1.2

12 3 4 5 6 7...12

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