Datasheet > PESD3V3L4UWT/R

PESD3V3L4UWT/R

更新时间： 2024-11-15 07:54:27

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
17页	111K
描述
TRANSIENT SUPPRESSOR DIODE ARRAY,UNIDIRECTIONAL,3.3V V(RWM),SOT-665

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中文翻译

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技术参数
数据手册

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PESD3V3L4UWT/R 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.84
击穿电压标称值：	5.6 V	最大钳位电压：	12 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	UNIDIRECTIONAL
最大重复峰值反向电压：	3.3 V	子类别：	Transient Suppressors
表面贴装：	YES

PESD3V3L4UWT/R 数据手册

PESDxL4UF; PESDxL4UG;

PESDxL4UW

Low capacitance unidirectional quadruple ESD protection

diode arrays

Rev. 04 — 28 February 2008

Product data sheet

1. Product proﬁle

1.1 General description

Low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode

arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to

four signal lines from the damage caused by ESD and other transients.

Table 1.

Product overview

Type number

Package

NXP

Package conﬁguration

JEITA

JEDEC

PESD3V3L4UF

PESD5V0L4UF

PESD3V3L4UG

PESD5V0L4UG

PESD3V3L4UW

PESD5V0L4UW

SOT886

SOT353

SOT665

MO-252

leadless ultra small

very small

MO-252

SC-88A

very small

ultra small and ﬂat lead

1.2 Features

I ESD protection of up to four lines

I Low diode capacitance

I Ultra low leakage current: I_RM= 5 nA

I ESD protection up to 20 kV

I Max. peak pulse power: P_PP= 30 W

I Low clamping voltage: V_CL= 12 V

I IEC 61000-4-2; level 4 (ESD)

I IEC 61000-4-5 (surge); I_PP= 2.5 A

1.3 Applications

I Computers and peripherals

I Audio and video equipment

I Cellular handsets and accessories

I Communication systems

I Portable electronics

I Subscriber Identity Module (SIM) card

protection

12 3 4 5 6 7...17

中文翻译

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