Datasheet > PESD3V3L1UB

PESD3V3L1UB

更新时间： 2024-11-19 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
4页	325K
描述
反向截止电压（Vrwm）:3.3V;极性/通道数（Channel）:1-Line，Unidirectional;击穿电压（VBR):5.3V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):8V;电容（Cj）:34pF

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中文翻译

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数据手册

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PESD3V3L1UB 数据手册

UMW

PESD3V3L1UB

Features

I Unidirectional ESD protection of

one line

I Low diode capacitance: C_d= 34 pF

I Low clamping voltage: V_CL= 11 V

I Very low leakage current: I_RM= 100 nA

I ESD protection up to 30 kV

I IEC 61000-4-2; level 4 (ESD)

I AEC-Q101 qualiﬁed

MACHANICAL DATA

Applications

■

SOD-523 package

I Computers and peripherals

Flammability Rating: UL 94V-0

Packaging: Tape and Reel

I Audio and video equipment

I Cellular handsets and accessories

I Communication systems

High temperature soldering guaranted:260℃/10S

I Subscriber Identity Module (SIM) card

protection

I Portable electronics

I FireWire

I High-speed data lines

Quick reference data

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

3.3

Unit

V_RWM

C_d

reverse standoff voltage

diode capacitance

f = 1 MHz; V_R= 0 V

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4

中文翻译

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PESD3V3L2BT	NXP	获取价格	Low capacitance double bidirectional ESD protection diodes in SOT23
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