5秒后页面跳转
PESD3V3L1UB,135 PDF预览

PESD3V3L1UB,135

更新时间: 2024-11-18 21:12:15
品牌 Logo 应用领域
恩智浦 - NXP 局域网光电二极管电视
页数 文件大小 规格书
13页 113K
描述
45W, UNIDIRECTIONAL, SILICON, TVS DIODE

PESD3V3L1UB,135 技术参数

生命周期:Transferred包装说明:R-PDSO-F2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.69
最大击穿电压:6 V最小击穿电压:5.3 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F2
最大非重复峰值反向功率耗散:45 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL参考标准:AEC-Q101; IEC-60134
最大重复峰值反向电压:3.3 V表面贴装:YES
技术:AVALANCHE端子形式:FLAT
端子位置:DUALBase Number Matches:1

PESD3V3L1UB,135 数据手册

 浏览型号PESD3V3L1UB,135的Datasheet PDF文件第2页浏览型号PESD3V3L1UB,135的Datasheet PDF文件第3页浏览型号PESD3V3L1UB,135的Datasheet PDF文件第4页浏览型号PESD3V3L1UB,135的Datasheet PDF文件第5页浏览型号PESD3V3L1UB,135的Datasheet PDF文件第6页浏览型号PESD3V3L1UB,135的Datasheet PDF文件第7页 
PESD3V3L1UA; PESD3V3L1UB;  
PESD3V3L1UL  
Low capacitance unidirectional ESD protection diodes  
Rev. 01 — 17 June 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in small  
Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from  
the damage caused by ESD and other transients.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Package configuration  
JEITA  
SC-76  
SC-79  
-
PESD3V3L1UA  
PESD3V3L1UB  
PESD3V3L1UL  
SOD323  
SOD523  
SOD882  
very small  
ultra small and flat lead  
leadless ultra small  
1.2 Features  
I Unidirectional ESD protection of  
one line  
I ESD protection up to 30 kV  
I Low diode capacitance: Cd = 34 pF  
I Low clamping voltage: VCL = 11 V  
I Very low leakage current: IRM = 100 nA  
I IEC 61000-4-2; level 4 (ESD)  
I AEC-Q101 qualified  
1.3 Applications  
I Computers and peripherals  
I Subscriber Identity Module (SIM) card  
protection  
I Audio and video equipment  
I Cellular handsets and accessories  
I Communication systems  
I Portable electronics  
I FireWire  
I High-speed data lines  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
-
Max  
3.3  
40  
Unit  
V
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
f = 1 MHz; VR = 0 V  
34  
pF  

与PESD3V3L1UB,135相关器件

型号 品牌 获取价格 描述 数据表
PESD3V3L1UB,315 NXP

获取价格

45W, UNIDIRECTIONAL, SILICON, TVS DIODE
PESD3V3L1UL NXP

获取价格

Low capacitance unidirectional ESD protection diodes
PESD3V3L1UL NEXPERIA

获取价格

Low capacitance unidirectional ESD protection diodeProduction
PESD3V3L1UL,315 NXP

获取价格

PESD3V3L1UA; PESD3V3L1UB; PESD3V3L1UL - Low capacitance unidirectional ESD protection diod
PESD3V3L1ULS NEXPERIA

获取价格

Unidirectional ESD protection diodeProduction
PESD3V3L2BT NXP

获取价格

Low capacitance double bidirectional ESD protection diodes in SOT23
PESD3V3L2BT PHILIPS

获取价格

Trans Voltage Suppressor Diode, 3.3V V(RWM), Bidirectional,
PESD3V3L2BT UMW

获取价格

反向截止电压(Vrwm):3.3V;极性/通道数(Channel):2-Line,Bidi
PESD3V3L2BT KEXIN

获取价格

2-Bidirectional ESD Protection Diodes
PESD3V3L2BT,215 NXP

获取价格

PESDxL2BT series - Low capacitance double bidirectional ESD protection diodes in SOT23 TO-