Datasheet > PESD3V3L2BT-Q

PESD3V3L2BT-Q

更新时间： 2024-09-27 11:12:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	230K
描述
Low capacitance double bidirectional ESD protection diode in SOT23Production

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PESD3V3L2BT-Q 数据手册

PESD3V3L2BT-Q

Low capacitance double bidirectional ESD protection diode

in SOT23

19 May 2023

Product data sheet

1. General description

Low capacitance double bidirectional ElectroStatic Discharge (ESD) protection diode in a SOT23

small Surface Mounted Device (SMD) plastic package designed to protect two signal lines from the

damage caused by ESD and other transients.

2. Features and benefits

•

ESD protection of two lines

•

Max. peak pulse power: P_PPM= 350 W

Low clamping voltage: V_CL= 26 V

Small SMD plastic package

Ultra low leakage current: I_RM= 90 nA

ESD protection up to 30 kV

IEC 61000-4-2, level 4 (ESD)

IEC 61000-4-5 (surge); I_PPM= 15 A

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Application information

•

Computers and peripherals

Audio and video equipment

Cellular handsets and accessories

Communication systems

Portable electronics

SIM card protection

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

3.3

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

101

12 3 4 5 6 7...10

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