Datasheet > PESD3V3L2BT

PESD3V3L2BT

更新时间： 2024-09-27 18:04:47

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科信 - KEXIN		/
页数	文件大小	规格书
6页	588K
描述
2-Bidirectional ESD Protection Diodes

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中文翻译

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数据手册

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PESD3V3L2BT 数据手册

SMD Type

Diodes

Transistors

ESD Protection Diodes

PESDxL2BT series

SOT-23

Unit:mm

+0.1

-0.1

2.9

0.4

■ Features

+0.1

-0.1

● ESD protection of two lines

● Max. peak pulse power: P^PP=350W

● Low clamping voltage: V^CL=26V

● Small SMD plastic package

● Ultra low leakage current: I^RM<90nA

● ESD protection up to 23 kV

● IEC61000-4-2, level4 (ESD)

● IEC61000-4-5 (surge); I^PP=15A

+0.1

+0.05

0.95

-0.1

0.1

-0.01

+0.1

-0.1

1.9

1.cathode1

2.cathode2

3.double cathode

■ Absolute Maximum Ratings

PESD

Parameter

Symbol

Unit

3V3L2BT 5V0L2BT 12VL2BT 15VL2BT 24VL2BT

IEC61000-4-2 (Note 2,3)

(contact discharge)

Electrostatic dischargevoltage

VESD

HBM MIL-STD883

Peak pulse power t

=8/20 µs (Note 1,2)

350

200

Peak pulse current t

Junction temperature

Ambient temperature

Storage temperature

150

-65 to +150

amb

stg

℃

Note 1: Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.

Note 2: Measured from pin 1 to 3 or 2 to 3.

Note 3: Device stressed with ten non-repetitive ESD pulses.

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