5秒后页面跳转
PESD3V3L1BA PDF预览

PESD3V3L1BA

更新时间: 2024-09-27 11:13:55
品牌 Logo 应用领域
安世 - NEXPERIA 局域网PC光电二极管电视
页数 文件大小 规格书
11页 228K
描述
Low capacitance bidirectional ESD protection diodeProduction

PESD3V3L1BA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.65Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:170827
Samacsys Pin Count:2Samacsys Part Category:TVS Diode (Bi-directional)
Samacsys Package Category:Small Outline DiodeSamacsys Footprint Name:SOD323 (SC-76)
Samacsys Released Date:2016-04-21 03:34:44Is Samacsys:N
最大击穿电压:6.9 V最小击穿电压:5.8 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:500 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
参考标准:IEC-60134; IEC-61000-4-2; IEC-61000-4-5最大重复峰值反向电压:3.3 V
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

PESD3V3L1BA 数据手册

 浏览型号PESD3V3L1BA的Datasheet PDF文件第2页浏览型号PESD3V3L1BA的Datasheet PDF文件第3页浏览型号PESD3V3L1BA的Datasheet PDF文件第4页浏览型号PESD3V3L1BA的Datasheet PDF文件第5页浏览型号PESD3V3L1BA的Datasheet PDF文件第6页浏览型号PESD3V3L1BA的Datasheet PDF文件第7页 
PESD3V3L1BA  
Low capacitance bidirectional ESD protection diode  
11 April 2023  
Product data sheet  
1. General description  
Bidirectional ElectroStatic Discharge (ESD) protection diode in a very small SOD323 (SC-76) SMD  
plastic package designed to protect one signal line from the damage caused by ESD and other  
transients.  
2. Features and benefits  
Bidirectional ESD protection of one line  
Max. peak pulse power: Pppm = 500 W  
Low clamping voltage: VCL = 26 V  
Ultra low leakage current: IRM = 0.09 μA  
ESD protection up to 30 kV  
IEC 61000-4-2, level 4 (ESD)  
IEC 61000-4-5 (surge); IPPM = 18 A  
Very small SMD plastic package  
3. Applications  
Computers and peripherals  
Communication systems  
Audio and video equipment  
Data lines  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
3.3  
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
101  
-
pF  
 
 
 
 

与PESD3V3L1BA相关器件

型号 品牌 获取价格 描述 数据表
PESD3V3L1BA-Q NEXPERIA

获取价格

Low capacitance bidirectional ESD protection diodeProduction
PESD3V3L1BBSF NEXPERIA

获取价格

Very low clamping bidirectional ESD protection diodeProduction
PESD3V3L1BSF NEXPERIA

获取价格

Very low clamping bidirectional ESD protection diodeProduction
PESD3V3L1BSL NEXPERIA

获取价格

ESD protection deviceProduction
PESD3V3L1UA NXP

获取价格

Low capacitance unidirectional ESD protection diodes
PESD3V3L1UB NXP

获取价格

Low capacitance unidirectional ESD protection diodes
PESD3V3L1UB NEXPERIA

获取价格

Low capacitance unidirectional ESD protection diodeProduction
PESD3V3L1UB UMW

获取价格

反向截止电压(Vrwm):3.3V;极性/通道数(Channel):1-Line,Unid
PESD3V3L1UB,135 NXP

获取价格

45W, UNIDIRECTIONAL, SILICON, TVS DIODE
PESD3V3L1UB,315 NXP

获取价格

45W, UNIDIRECTIONAL, SILICON, TVS DIODE