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PESD3V3L1UB

更新时间: 2024-09-27 11:11:27
品牌 Logo 应用领域
安世 - NEXPERIA 局域网PC光电二极管
页数 文件大小 规格书
10页 230K
描述
Low capacitance unidirectional ESD protection diodeProduction

PESD3V3L1UB 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.67Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:310044
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Small Outline DiodeSamacsys Footprint Name:SOD523(SC-79)
Samacsys Released Date:2016-06-15 02:01:43Is Samacsys:N
最大击穿电压:6 V最小击穿电压:5.3 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:45 W元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL参考标准:AEC-Q101; IEC-60134; IEC-61000-4-5
最大重复峰值反向电压:3.3 V表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

PESD3V3L1UB 数据手册

 浏览型号PESD3V3L1UB的Datasheet PDF文件第2页浏览型号PESD3V3L1UB的Datasheet PDF文件第3页浏览型号PESD3V3L1UB的Datasheet PDF文件第4页浏览型号PESD3V3L1UB的Datasheet PDF文件第5页浏览型号PESD3V3L1UB的Datasheet PDF文件第6页浏览型号PESD3V3L1UB的Datasheet PDF文件第7页 
PESD3V3L1UB  
Low capacitance unidirectional ESD protection diode  
6 April 2021  
Product data sheet  
1. General description  
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode in an ultra small and  
flat lead SOD523 (SC-79) Surface-Mounted Device (SMD) plastic packages designed to protect  
one signal line from the damage caused by ESD and other transients.  
2. Features and benefits  
Unidirectional ESD protection of one line  
Low diode capacitance: Cd = 34 pF  
Low clamping voltage: VCL = 11 V  
Very low leakage current: IRM = 100 nA  
ESD protection up to 30 kV  
IEC 61000-4-2; level 4 (ESD)  
AEC-Q101 qualified  
3. Application information  
Computers and peripherals  
Audio and video equipment  
Cellular handsets and accessories  
Communication systems  
SIM card protection  
Portable electronics  
High-speed data lines  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VRWM  
reverse standoff  
voltage  
Tamb = 25 °C  
-
-
3.3  
V
Cd  
diode capacitance  
f = 1 MHz; VR = 0 V; Tamb = 25 °C  
-
34  
40  
pF  
 
 
 
 

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