Datasheet > PESD3V3L1BSL

PESD3V3L1BSL

更新时间： 2024-09-27 11:13:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	218K
描述
ESD protection deviceProduction

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PESD3V3L1BSL 数据手册

PESD3V3L1BSL

ESD protection device

28 September 2021

Product data sheet

1. General description

Bidirectional ElectroStatic Discharge (ESD) protection diode in a DFN1006-2 (SOD882-S1)

leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal

line from the damage caused by ESD and other transients.

2. Features and benefits

•

Bidirectional protection of one line

•

Reverse stand-off voltage: V_RWM= 3.3 V

Surge robustness: I_PPM= 7.5 A for 8/20 μs pulse

Ultra low clamping voltage: V_CL= 11.3 V max. at I_PPM= 7.5 A

3. Applications

•

Portable electronics

Computers and peripherals

Audio and video equipment

Communication systems

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

3.3

I_PPM

V_CL

rated peak pulse

current

t_p= 8/20 µs

[1]

7.5

clamping voltage

I_PPM= 7.5 A; t_p= 8/20 µs; T_amb= 25 °C [1]

11.3

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

12 3 4 5 6 7...11

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