Datasheet > PESD3V3C2UM

PESD3V3C2UM

更新时间： 2024-11-19 17:01:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	230K
描述
Extremely low capacitance unidirectional ESD protection diode arrayProduction

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PESD3V3C2UM 数据手册

PESD3V3C2UM

Extremely low capacitance unidirectional ESD protection

diode array

9 February 2024

Product data sheet

1. General description

Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode array, part

of the TrEOS protection family. This device is housed in a DFN1006-3 (SOT883-2) leadless ultra

small Surface-Mounted Device (SMD) plastic package, designed to protect up to two signal lines

from the damage caused by ESD and other transients.

2. Features and benefits

•

Unidirectional ESD protection of one line pair

•

V_RWM= 3.3 V device

Very high surge robustness of 6.5 A for a 8/20 μs pulse

Very low diode capacitance: C_d= 0.4 pF typical

Extremely low clamping voltage to protect sensitive I/Os

ESD protection up to ±15 kV according to IEC 61000-4-2

Leadless ultra small SOT883-2 surface mount package

IEC61000-4-4 robust up to level 4 (corresponds to 40 A into a 50 Ohm termination)

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

USB2.0, USB3.0 data lines at 5 Gbps

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

[1]

3.3

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.4

0.6

[1] Measured from pin 1 or 2 to pin 3.

12 3 4 5 6 7...12

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