Datasheet > PESD3V3F1BSF

PESD3V3F1BSF

更新时间： 2024-09-27 11:12:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	147K
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PESD3V3F1BSF 数据手册

PESD3V3F1BSF

Extremely low clamping bidirectional ESD protection diode

12 March 2021

Short data sheet

1. General description

Extremely low clamping low capacitance bidirectional ElectroStatic Discharge (ESD) protection

diode, which is part of the TrEOS protection family. The device is housed in a DSN0603-2

(SOD962-2) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one

signal line from damage caused by ESD and other transients.

2. Features and benefits

•

Bidirectional ESD protection of one line

•

Extremely high surge robustness of 20 A 8/20 μs

Low diode capacitance C_d= 0.78 pF

Extremely low clamping voltage to protect sensitive I/Os: V_CL= 3.4 V at 20 A 8/20 µs

Extremely low inductance protection path to ground

ESD protection up to ±20 kV according to IEC 61000-4-2

Ultra small SMD package

3. Applications

•

Cellular handsets and accessories

Portable electronics

Communication systems

Computers and peripherals

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

-3.3

3.3

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

0.78

0.94

5. Pinning information

Table 2. Pinning information

Symbol

Description

cathode

Simplified outline

Graphic symbol

cathode

sym045

Transparent

top view

DSN0603-2 (SOD962-2)

12 3 4 5 6 7

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