Datasheet > NVTFS5C460NLTAG

NVTFS5C460NLTAG

更新时间： 2024-11-07 11:13:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	221K
描述
单 N 沟道功率 MOSFET 40V，74A，4.8mΩ

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NVTFS5C460NLTAG 数据手册

MOSFET – Power, Single

N-Channel

40 V, 4.8 mW, 74 A

NVTFS5C460NL

Features

www.onsemi.com

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVTFS5C460NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

MAX

I MAX

(BR)DSS

DS(on)

4.8 mW @ 10 V

7.6 mW @ 4.5 V

40 V

74 A

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

N−Channel

D (5 − 8)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

G (4)

(Notes 1, 2, 3, 4)

Steady

State

Power Dissipation

S (1, 2, 3)

(Notes 1, 2, 3)

= 100°C

Continuous Drain

Current R

T = 25°C

MARKING DIAGRAM

T = 100°C

(Notes 1, 3, 4)

Steady

State

XXXX

AYWWG

WDFN8

(m8FL)

CASE 511AB

Power Dissipation

T = 25°C

3.1

1.6

321

(Notes 1, 3)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

XXXX = Specific Device Code

+175

= Assembly Location

= Year

Source Current (Body Diode)

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

Single Pulse Drain−to−Source Avalanche

104

Energy (I

= 4.6 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

3.0

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

47.7

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

December, 2019 − Rev. 2

NVTFS5C460NL/D

12 3 4 5 6 7

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与NVTFS5C460NLTAG相关器件

型号	品牌	获取价格	描述	数据表
NVTFS5C460NLWFTAG	ONSEMI	获取价格	单 N 沟道功率 MOSFET 40V，74A，4.8mΩ
NVTFS5C466NL	ONSEMI	获取价格	Power MOSFET
NVTFS5C466NLTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C466NLWFTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C471NL	ONSEMI	获取价格	MOSFET â Power, Single N-Channel
NVTFS5C471NLTAG	ONSEMI	获取价格	MOSFET â Power, Single N-Channel
NVTFS5C471NLWFTAG	ONSEMI	获取价格	MOSFET â Power, Single N-Channel
NVTFS5C478NL	ONSEMI	获取价格	MOSFET â Power, Single N-Channel 40 V, 14 m
NVTFS5C478NLTAG	ONSEMI	获取价格	MOSFET â Power, Single N-Channel 40 V, 14 m
NVTFS5C478NLWFTAG	ONSEMI	获取价格	MOSFET â Power, Single N-Channel 40 V, 14 m

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