Datasheet > NVTFS5C670NL

NVTFS5C670NL

更新时间： 2024-11-06 01:11:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	86K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVTFS5C670NL 数据手册

NVTFS5C670NL

Power MOSFET

60 V, 6.8 mW, 70 A, Single N−Channel

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

www.onsemi.com

• Low Capacitance to Minimize Driver Losses

• NVTFS5C670NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

MAX

I MAX

(BR)DSS

DS(on)

• These Devices are Pb−Free and are RoHS Compliant

6.8 mW @ 10 V

10 mW @ 4.5 V

60 V

70 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

N−Channel

Gate−to−Source Voltage

D (5 − 8)

Continuous Drain

Current R

(Notes 1, 2, 3, 4)

= 25°C

= 100°C

= 25°C

Steady

State

Power Dissipation

G (4)

(Notes 1, 2, 3)

= 100°C

S (1, 2, 3)

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1 & 3, 4)

Steady

State

MARKING DIAGRAM

Power Dissipation

T = 25°C

3.2

1.6

440

(Notes 1, 3)

T = 100°C

XXXX

AYWWG

WDFN8

(m8FL)

CASE 511AB

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

+175

°C

stg

XXXX = Specific Device Code

Source Current (Body Diode)

= Assembly Location

= Year

Single Pulse Drain−to−Source Avalanche

166

Energy (I

= 3.6 A)

L(pk)

= Work Week

= Pb−Free Package

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

(Note: Microdot may be in either location)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

package dimensions section on page 5 of this data sheet.

Parameter

Symbol

Value

2.4

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

March, 2017 − Rev. 1

NVTFS5C670NL/D

12 3 4 5 6

中文翻译

下载PDF

与NVTFS5C670NL相关器件

型号	品牌	获取价格	描述	数据表
NVTFS5C670NLTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C670NLWFTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C673NL	ONSEMI	获取价格	Power MOSFET
NVTFS5C673NLTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C673NLWFTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C680NL	ONSEMI	获取价格	Power MOSFET
NVTFS5C680NLTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C680NLWFTAG	ONSEMI	获取价格	Power MOSFET
NVTFS6H850NLTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 64A, 8.6mΩ
NVTFS6H850NLWFTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 64A, 8.6mΩ

与NVTFS5C670NL相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

NVTFS5C670NL

NVTFS5C670NL 数据手册

与NVTFS5C670NL相关器件

与NVTFS5C670NL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVTFS5C670NL

NVTFS5C670NL 数据手册

与NVTFS5C670NL相关器件

与NVTFS5C670NL相关文章

您还可以找

您在本页遇到什么问题？