Datasheet > NVTFS6H860NTAG

NVTFS6H860NTAG

更新时间： 2024-11-06 11:12:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	275K
描述
Single N-Channel Power MOSFET 80V, 33A, 21.1mΩ

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NVTFS6H860NTAG 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single,

N-Channel

MAX

I MAX

(BR)DSS

DS(on)

80 V

21.1 mW @ 10 V

33 A

80 V, 21.1 mW, 33 A

N−Channel

D (5 − 8)

NVTFS6H860N

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVTFS6H860NWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

S (1, 2, 3)

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

WDFN8 3.3x3.3, 0.65P

CASE 511AB

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)

CASE 515AN

= 100°C

(Notes 1, 2, 3, 4)

Steady

State

Power Dissipation

= 25°C

(Notes 1, 2, 3)

MARKING DIAGRAM

= 100°C

Continuous Drain

Current R

T = 25°C

8.0

XXXX

AYWWG

T = 100°C

5.5

(Notes 1, 3, 4)

Steady

State

Power Dissipation

T = 25°C

3.1

1.6

119

(Notes 1, 3)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

XXXX = Specific Device Code

= Assembly Location

= Year

= Work Week

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

Source Current (Body Diode)

= Pb−Free Package

Single Pulse Drain−to−Source Avalanche

138

(Note: Microdot may be in either location)

Energy (I

= 1.5 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

3.3

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

48.2

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

April, 2022 − Rev. 2

NVTFS6H860N/D

12 3 4 5 6 7 8

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与NVTFS6H860NTAG相关器件

型号	品牌	获取价格	描述	数据表
NVTFS6H860NWFTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 33A, 21.1m
NVTFS6H880N	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H880NLTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 29 mΩ
NVTFS6H880NLWFTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 29 mΩ
NVTFS6H880NTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H880NWFTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H888NL	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H888NLTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H888NLWFTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H888NTAG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80V，13A，55mΩ

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