MOSFET - Power, Single
N-Channel, m8FL
60 V, 20.3 mW, 27 A
NVTFS020N06C
Features
www.onsemi.com
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
• Low Q and Capacitance to Minimize Driver Losses
G
• NVTFWS020N06C − Wettable Flank Option for Enhanced Optical
Inspection
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
60 V
20.3 mW @ 10 V
27 A
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
N−Channel
D (5 − 8)
Typical Applications
• Power Tools, Battery Operated Vacuums
• UAV/Drones, Material Handling
• BMS/Storage, Home Automation
G (4)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
S (1, 2, 3)
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
MARKING
Gate−to−Source Voltage
V
GS
20
V
DIAGRAMS
1
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
27
A
C
D
1
S
S
S
G
D
D
D
D
q
JC
T
C
19
XXXX
AYWWG
G
(Notes 1, 3)
WDFN8
(m8FL)
CASE 511AB
Steady
State
Power Dissipation
T
C
P
31
W
A
D
R
(Note 1)
q
JC
T
C
= 100°C
15
Continuous Drain
Current R
T = 25°C
A
I
D
7
q
JA
T = 100°C
A
5
(Notes 1, 2, 3)
Steady
State
XXXX
AYWWG
G
Power Dissipation
T = 25°C
A
P
2.5
1.2
128
W
D
R
(Notes 1, 2)
q
JA
WDFNW8
(Full−Cut m8FL)
CASE 515AN
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
°C
J
stg
XXXX = Specific Device Code
+175
A
Y
= Assembly Location
= Year
Source Current (Body Diode)
I
S
25
17
A
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
Energy (I
= 5.7 A)
L(pk)
Lead Temperature Soldering Reflow for Sol-
dering Purposes (1/8″ from case for 10 s)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
November, 2020 − Rev. 1
NVTFS020N06C/D