Datasheet > NVTR01P02LT1G

NVTR01P02LT1G

更新时间： 2024-11-25 12:03:47

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
2页	165K
描述
Power MOSFET â20 V, â1.3 A, PâChannel SOTâ23 Package Packages are Available

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NVTR01P02LT1G 数据手册

Product specification

NTR1P02L, NVTR01P02L

Power MOSFET

Max

I Max

(BR)DSS

DS(on)

−20 V, −1.3 A, P−Channel

SOT−23 Package

−20 V

220 mW @ −4.5 V

−1.3 A

P−Channel

These miniature surface mount MOSFETs low R

assure

DS(on)

minimal power loss and conserve energy, making these devices ideal

for use in space sensitive power management circuitry. Typical

applications are DC−DC converters and power management in

portable and battery−powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

Features

• Low R

Provides Higher Efficiency and Extends Battery Life

• Miniature SOT−23 Surface Mount Package Saves Board Space

DS(on)

MARKING DIAGRAM &

PIN ASSIGNMENT

• NVTR Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• Pb−Free and Halide−Free Packages are Available

Drain

P02 M G

SOT−23

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

CASE 318

STYLE 21

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Symbol

Value

−20

Unit

Gate

Source

DSS

P02

= Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

−1.3

−4.0

− Continuous @ T = 25°C

− Pulsed Drain Current (t ≤ 10 ms)

Total Power Dissipation @ T = 25°C

400

ORDERING INFORMATION

Operating and Storage Temperature Range

T , T

− 55 to

150

°C

stg

†

Device

Package

Shipping

Thermal Resistance − Junction−to−Ambient

300

260

°C/W

°C

NTR1P02LT1G

NTR1P02LT3G

NVTR01P02LT1G

SOT−23

(Pb−Free)

3000 Tape & Reel

Maximum Lead Temperature for Soldering

Purposes, (1/8″ from case for 10 s)

SOT−23

(Pb−Free)

10,000 Tape &

Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−23

(Pb−Free)

3000 Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

http://www.twtysemi.com

sales@twtysemi.com

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与NVTR01P02LT1G相关器件

型号	品牌	获取价格	描述	数据表
NVTR0202PL	ONSEMI	获取价格	Power MOSFET â20 V, â400 mA, PâChannel
NVTR0202PLT1G	ONSEMI	获取价格	Power MOSFET â20 V, â400 mA, PâChannel
NVTR1P02LT1G	ONSEMI	获取价格	1300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND LEAD FREE, MINI
NVTR4502P	ONSEMI	获取价格	â30 V, â1.95 A, Single, PâChannel, SOTâ
NVTR4502P	TYSEMI	获取价格	Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Battery Charging Circuits
NVTR4502PT1G	TYSEMI	获取价格	Power MOSFET -30 V, -1.95 A, Single, P-Channel, SOT-23 Battery Charging Circuits
NVTR4502PT1G	ONSEMI	获取价格	â30 V, â1.95 A, Single, PâChannel, SOTâ
NVTR4503N	ONSEMI	获取价格	Power MOSFET
NVTR4503NT1G	ONSEMI	获取价格	Power MOSFET
NVTYS002N03CLTWG	ONSEMI	获取价格	MOSFET – Power, Single, N-Channel

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