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NVTFWS9D6P04M8LTAG

更新时间： 2024-11-26 11:15:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 357K
描述
MOSFET - Power, Single P-Channel

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NVTFWS9D6P04M8LTAG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET - Power, Single  
P-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
9.5 mW @ −10 V  
−40 V  
−64 A  
13.8 mW @ −4.5 V  
-40 V, 9.5 mW, -64 A  
NVTFS9D6P04M8L  
Features  
P−Channel MOSFET  
D (5−8)  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
DS(on)  
G (4)  
• NVTFWS9D6P04M8L − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS  
Compliant  
S (1,2,3)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
−40  
20  
Unit  
V
1
V
DSS  
WDFN8 3.3x3.3, 0.65P  
CASE 511AB  
Gate−to−Source Voltage  
V
GS  
V
Continuous Drain  
Current R  
T
= 25°C  
I
D
−64  
A
C
q
JC  
T
C
= 100°C  
−46  
(Notes 1, 2, 4)  
Steady  
State  
Power Dissipation  
T
C
= 25°C  
P
D
75  
38  
W
A
R
(Notes 1, 2)  
q
JC  
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)  
T
C
= 100°C  
CASE 515AN  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
−13  
q
JA  
T = 100°C  
A
−9  
(Notes 1, 3, 4)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
D
3.2  
1.6  
311  
W
MARKING DIAGRAM  
R
(Notes 1, 3)  
q
JA  
T = 100°C  
A
1
S
S
S
G
D
D
D
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
A
I
DM  
A
p
XXXX  
AYWWG  
G
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
S
−62  
A
XXXX = Specific Device Code  
Single Pulse Drain−to−Source Avalanche  
E
220  
mJ  
AS  
Energy (I  
= −8.5 A)  
A
Y
= Assembly Location  
= Year  
L(pk)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
WW  
G
= Work Week  
= Pb−Free Package  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
(Note: Microdot may be in either location)  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State (Drain)  
R
2
°C/W  
q
JC  
(Notes 1, 2, 4)  
Junction−to−Ambient − Steady State (Note 3)  
R
47  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Assumes heat−sink sufficiently large to maintain constant case temperature  
independent of device power.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
April, 2022 − Rev. 5  
NVTFS9D6P04M8L/D  
 
12345678

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