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NVTFWS014P04M8LTAG PDF预览

NVTFWS014P04M8LTAG

更新时间： 2024-11-06 11:12:03
品牌 Logo 应用领域
安森美 - ONSEMI 脉冲光电二极管晶体管
页数 文件大小 规格书
8页 299K
描述
Power MOSFET, Single P-Channel, -40 V, 13.8 mΩ, -49 A

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NVTFWS014P04M8LTAG 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, S-PDSO-F5Reach Compliance Code：compliant
Factory Lead Time：6 weeks风险等级：1.53
雪崩能效等级（Eas）：143 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (Abs) (ID)：49 A最大漏极电流 (ID)：49 A
最大漏源导通电阻：0.0138 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：32 pFJESD-30 代码：S-PDSO-F5
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：61 W
最大脉冲漏极电流 (IDM)：224 A参考标准：AEC-Q101
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管元件材料：SILICON
Base Number Matches：1

NVTFWS014P04M8LTAG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – Power, Single,  
P-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
13.8 mW @ −10 V  
18.7 mW @ −4.5 V  
−40 V  
−49 A  
-40 V, 13.8 mW, -49 A  
P−Channel MOSFET  
D (5−8)  
NVTFS014P04M8L  
Features  
Small Footprint (3.3 x 3.3 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
G (4)  
Low Capacitance to Minimize Driver Losses  
NVTFWS014P04M8L − Wettable Flanks Product  
S (1,2,3)  
AEC−Q101 Qualified and PPAP Capable  
These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS  
Compliant  
MARKING DIAGRAMS  
1
MAXIMUM RATINGS (T = 25C unless otherwise noted)  
J
1
S
S
S
G
D
D
D
D
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
−40  
Unit  
V
XXXX  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
I
A
T
= 25C  
−49  
D
C
q
JC  
T
C
= 100C  
−35  
(Notes 1, 2, 4)  
Steady  
State  
Power Dissipation  
P
W
A
T
C
= 25C  
61  
30  
D
R
(Notes 1, 2)  
q
JC  
XXXX  
AYWWG  
G
T
C
= 100C  
Continuous Drain  
I
D
T = 25C  
A
−11.3  
Current R  
q
WDFNW8  
(Full−Cut m8FL WF)  
JA  
T = 100C  
A
−8  
(Notes 1, 3, 4)  
Steady  
State  
CASE 515AN  
Power Dissipation  
P
W
T = 25C  
A
3.2  
1.6  
224  
D
R
(Notes 1, 3)  
q
JA  
T = 100C  
A
XXXX = Specific Device Code  
Pulsed Drain Current  
T = 25C, t = 10 ms  
I
DM  
A
A
Y
= Assembly Location  
= Year  
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
C  
J
stg  
WW  
G
= Work Week  
= Pb−Free Package  
+175  
Source Current (Body Diode)  
I
S
−50  
A
(Note: Microdot may be in either location)  
Single Pulse Drain−to−Source Avalanche  
E
AS  
143  
mJ  
Energy (I  
= −6.1 A)  
L(pk)  
Lead Temperature for Soldering Purposes  
T
260  
C  
L
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
(1/8from case for 10 s)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
C/W  
Junction−to−Case − Steady State (Drain)  
(Notes 1, 2, 4)  
R
2.5  
q
JC  
Junction−to−Ambient − Steady State (Note 3)  
R
47  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Assumes heat−sink sufficiently large to maintain constant case temperature  
independent of device power.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
September, 2022 − Rev. 5  
NVTFS014P04M8L/D  
 
12345678

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