Datasheet > NVTFS6H888NTAG

NVTFS6H888NTAG

更新时间： 2024-09-17 11:11:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	275K
描述
单 N 沟道，功率 MOSFET，80V，13A，55mΩ

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DATA SHEET

www.onsemi.com

MOSFET - Power, Single,

N-Channel

MAX

I MAX

(BR)DSS

DS(on)

80 V

55 mW @ 10 V

13 A

80 V, 55 mW, 13 A

N−Channel

D (5 − 8)

NVTFS6H888N

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

G (4)

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVTFS6H888NWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

S (1, 2, 3)

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

WDFN8 3.3x3.3, 0.65P

CASE 511AB

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)

= 100°C

8.3

(Notes 1, 2, 3, 4)

CASE 515AN

Steady

State

Power Dissipation

= 25°C

9.2

4.7

(Notes 1, 2, 3)

= 100°C

MARKING DIAGRAM

Continuous Drain

Current R

T = 25°C

T = 100°C

3.3

(Notes 1, 3, 4)

Steady

State

XXXX

AYWWG

Power Dissipation

T = 25°C

2.9

1.5

(Notes 1, 3)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

XXXX = Specific Device Code

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

= Assembly Location

= Year

+175

Source Current (Body Diode)

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

Single Pulse Drain−to−Source Avalanche

Energy (I

= 0.6 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

8.2

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

51.5

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

April, 2022 − Rev. 2

NVTFS6H888N/D

12 3 4 5 6 7 8

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与NVTFS6H888NTAG相关器件

型号	品牌	获取价格	描述	数据表
NVTFS6H888NWFTAG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80V，13A，55mΩ
NVTFS8D1N08HTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 61A, 8.3mΩ
NVTFS9D6P04M8LTAG	ONSEMI	获取价格	MOSFET - Power, Single P-Channel
NVTFWS002N04CLTAG	ONSEMI	获取价格	功率 MOSFET，40 V，2.0 Ω，142 A，单 N 沟道
NVTFWS002N04CTAG	ONSEMI	获取价格	Power MOSFET, 40 V, 2.4 Ω, 136 A, Single N-Ch
NVTFWS003N04CTAG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，103A，3.5mΩ
NVTFWS004N04CTAG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，77A，4.9mΩ
NVTFWS005N04CTAG	ONSEMI	获取价格	Power MOSFET, Single N-Channel, 40 V, 5.6 mOhms, 69 A
NVTFWS005N08XLTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 79 A, 5.3
NVTFWS007N08HLTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 71A, 7mΩ

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