NVTFS5C680NL
Power MOSFET
60 V, 26.5 mW, 20 A, Single N−Channel
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
www.onsemi.com
• Low Capacitance to Minimize Driver Losses
• NVTFS5C680NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
• These Devices are Pb−Free and are RoHS Compliant
26.5 mW @ 10 V
42.5 mW @ 4.5 V
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
60 V
20 A
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
V
DSS
N−Channel
Gate−to−Source Voltage
V
GS
20
V
D (5 − 8)
Continuous Drain
Current R
(Notes 1, 2, 3, 4)
T
= 25°C
= 100°C
= 25°C
I
20
A
C
D
q
JC
T
C
14
Steady
State
Power Dissipation
T
C
P
20
W
A
D
R
(Notes 1, 2, 3)
q
JC
G (4)
T
C
= 100°C
10
Continuous Drain
Current R
T = 25°C
A
I
D
7.82
6.54
3.0
2.1
80
S (1, 2, 3)
q
JA
T = 100°C
A
(Notes 1 & 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
W
D
MARKING DIAGRAM
R
(Notes 1, 3)
q
JA
1
T = 100°C
A
1
S
S
S
G
D
D
D
D
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
XXXX
AYWWG
G
WDFN8
(m8FL)
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
CASE 511AB
Source Current (Body Diode)
I
22
51
A
S
XXXX = Specific Device Code
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
A
= Assembly Location
= Year
Energy (I
= 1 A)
L(pk)
Y
WW
G
= Work Week
= Pb−Free Package
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
package dimensions section on page 5 of this data sheet.
Parameter
Symbol
Value
7.32
49
Unit
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
JA
R
q
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
January, 2017 − Rev. 0
NVTFS5C680NL/D
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