Datasheet > NVTFS6H860NLTAG

NVTFS6H860NLTAG

更新时间： 2024-11-07 02:52:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	275K
描述
MOSFET - Power, Single N-Channel

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NVTFS6H860NLTAG 数据手册

MOSFET - Power, Single

N-Channel

80 V, 20 mW, 30 A

NVTFS6H860NL

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVTFS6H860NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

MAX

I MAX

(BR)DSS

DS(ON)

20 mW @ 10 V

26 mW @ 4.5 V

80 V

30 A

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

N−Channel

D (5 − 8)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

G (4)

(Notes 1, 2, 3, 4)

Steady

State

Power Dissipation

(Notes 1, 2, 3)

S (1, 2, 3)

= 100°C

Continuous Drain

Current R

T = 25°C

8.1

5.7

3.1

1.6

122

MARKING

DIAGRAMS

T = 100°C

(Notes 1, 3, 4)

Steady

State

Power Dissipation

T = 25°C

(Notes 1, 3)

T = 100°C

XXXX

AYWWG

WDFN8

(m8FL)

CASE 511AB

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

Range

T , T

−55 to

+175

°C

stg

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

121

XXXX

AYWWG

Energy (I

= 1.5 A)

L(pk)

WDFNW8

(Full−Cut m8FL)

CASE 515AN

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

XXXX = Specific Device Code

= Assembly Location

= Year

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

= Work Week

Parameter

Symbol

Value

3.6

Unit

= Pb−Free Package

(Note: Microdot may be in either location)

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

November, 2020 − Rev. 1

NVTFS6H860NL/D

12 3 4 5 6 7 8

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与NVTFS6H860NLTAG相关器件

型号	品牌	获取价格	描述	数据表
NVTFS6H860NLWFTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H860NTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 33A, 21.1m
NVTFS6H860NWFTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 33A, 21.1m
NVTFS6H880N	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H880NLTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 29 mΩ
NVTFS6H880NLWFTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel, 80 V, 29 mΩ
NVTFS6H880NTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H880NWFTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H888NL	ONSEMI	获取价格	MOSFET - Power, Single N-Channel
NVTFS6H888NLTAG	ONSEMI	获取价格	MOSFET - Power, Single N-Channel

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