MOSFET - Power, Single
N-Channel
80 V, 20 mW, 30 A
NVTFS6H860NL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
www.onsemi.com
• Low R
to Minimize Conduction Losses
DS(on)
• Low Capacitance to Minimize Driver Losses
• NVTFS6H860NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
V
R
MAX
I MAX
D
(BR)DSS
DS(ON)
20 mW @ 10 V
26 mW @ 4.5 V
80 V
30 A
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
80
Unit
V
N−Channel
D (5 − 8)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain
Current R
T
= 25°C
= 100°C
= 25°C
I
30
A
C
D
q
JC
T
C
21
G (4)
(Notes 1, 2, 3, 4)
Steady
State
Power Dissipation
T
C
P
42
W
A
D
R
(Notes 1, 2, 3)
q
JC
S (1, 2, 3)
T
C
= 100°C
21
Continuous Drain
Current R
T = 25°C
A
I
D
8.1
5.7
3.1
1.6
122
MARKING
DIAGRAMS
q
JA
T = 100°C
A
(Notes 1, 3, 4)
Steady
State
Power Dissipation
T = 25°C
A
P
W
1
D
1
R
(Notes 1, 3)
S
S
S
G
D
D
D
D
q
JA
T = 100°C
A
XXXX
AYWWG
G
WDFN8
(m8FL)
CASE 511AB
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
Range
T , T
−55 to
+175
°C
J
stg
Source Current (Body Diode)
I
S
35
A
Single Pulse Drain−to−Source Avalanche
E
121
mJ
XXXX
AYWWG
G
AS
Energy (I
= 1.5 A)
L(pk)
WDFNW8
(Full−Cut m8FL)
CASE 515AN
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
WW
G
= Work Week
Parameter
Symbol
Value
3.6
Unit
= Pb−Free Package
(Note: Microdot may be in either location)
Junction−to−Case − Steady State (Note 3)
Junction−to−Ambient − Steady State (Note 3)
R
°C/W
q
JC
R
48
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
November, 2020 − Rev. 1
NVTFS6H860NL/D