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NVTFS6H860NLWFTAG

更新时间： 2024-11-26 02:52:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 275K
描述
MOSFET - Power, Single N-Channel

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NVTFS6H860NLWFTAG 数据手册

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MOSFET - Power, Single  
N-Channel  
80 V, 20 mW, 30 A  
NVTFS6H860NL  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
www.onsemi.com  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• NVTFS6H860NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
20 mW @ 10 V  
26 mW @ 4.5 V  
80 V  
30 A  
• These Devices are Pb−Free and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
80  
Unit  
V
N−Channel  
D (5 − 8)  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
= 100°C  
= 25°C  
I
30  
A
C
D
q
JC  
T
C
21  
G (4)  
(Notes 1, 2, 3, 4)  
Steady  
State  
Power Dissipation  
T
C
P
42  
W
A
D
R
(Notes 1, 2, 3)  
q
JC  
S (1, 2, 3)  
T
C
= 100°C  
21  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
8.1  
5.7  
3.1  
1.6  
122  
MARKING  
DIAGRAMS  
q
JA  
T = 100°C  
A
(Notes 1, 3, 4)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
1
D
1
R
(Notes 1, 3)  
S
S
S
G
D
D
D
D
q
JA  
T = 100°C  
A
XXXX  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Source Current (Body Diode)  
I
S
35  
A
Single Pulse Drain−to−Source Avalanche  
E
121  
mJ  
XXXX  
AYWWG  
G
AS  
Energy (I  
= 1.5 A)  
L(pk)  
WDFNW8  
(Full−Cut m8FL)  
CASE 515AN  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
XXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
WW  
G
= Work Week  
Parameter  
Symbol  
Value  
3.6  
Unit  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Junction−to−Case − Steady State (Note 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
JC  
R
48  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
November, 2020 − Rev. 1  
NVTFS6H860NL/D  
 
12345678

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