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NVTFS6H850NLWFTAG

更新时间： 2024-11-07 11:10:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 270K
描述
Single N-Channel Power MOSFET 80V, 64A, 8.6mΩ

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NVTFS6H850NLWFTAG 数据手册

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DATA SHEET  
www.onsemi.com  
MOSFET – Power, Single,  
N-Channel  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
8.6 mW @ 10 V  
11 mW @ 4.5 V  
80 V  
64 A  
80 V, 8.6 mW, 64 A  
NVTFS6H850NL  
N−Channel  
D (5 − 8)  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
G (4)  
• Low Capacitance to Minimize Driver Losses  
• NVTFS6H850NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
S (1, 2, 3)  
• These Devices are Pb−Free and are RoHS Compliant  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
1
WDFN8 3.3x3.3, 0.65P  
CASE 511AB  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
80  
Unit  
V
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
T
= 25°C  
I
64  
A
C
D
q
JC  
T
C
= 100°C  
45  
(Notes 1, 2, 3, 4)  
Steady  
State  
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)  
CASE 515AN  
Power Dissipation  
T
C
= 25°C  
P
73  
37  
W
A
D
R
(Notes 1, 2, 3)  
q
JC  
T
C
= 100°C  
MARKING DIAGRAM  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
14.8  
q
JA  
1
T = 100°C  
A
10.4  
(Notes 1, 3, 4)  
Steady  
State  
S
S
S
G
D
D
D
D
XXXX  
AYWWG  
G
Power Dissipation  
T = 25°C  
A
P
3.9  
1.9  
308  
W
D
R
(Notes 1, 3)  
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T
C
= 25°C, t = 10 ms  
I
DM  
A
p
XXXX = Specific Device Code  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
A
Y
= Assembly Location  
= Year  
+175  
Source Current (Body Diode)  
I
S
61  
A
WW  
G
= Work Week  
= Pb−Free Package  
Single Pulse Drain−to−Source Avalanche  
E
AS  
208  
mJ  
Energy (I  
= 3.4 A)  
L(pk)  
(Note: Microdot may be in either location)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
2.0  
Unit  
Junction−to−Case − Steady State (Note 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
JC  
R
39  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
April, 2022 − Rev. 1  
NVTFS6H850NL/D  
 
12345678

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