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NVTFS5C680NLWFTAG

更新时间： 2024-09-17 01:11:07
品牌 Logo 应用领域
安森美 - ONSEMI /
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6页 87K
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Power MOSFET

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NVTFS5C680NLWFTAG 数据手册

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NVTFS5C680NL  
Power MOSFET  
60 V, 26.5 mW, 20 A, Single N−Channel  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
www.onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• NVTFS5C680NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• These Devices are Pb−Free and are RoHS Compliant  
26.5 mW @ 10 V  
42.5 mW @ 4.5 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
60 V  
20 A  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
V
DSS  
N−Channel  
Gate−to−Source Voltage  
V
GS  
20  
V
D (5 − 8)  
Continuous Drain  
Current R  
(Notes 1, 2, 3, 4)  
T
= 25°C  
= 100°C  
= 25°C  
I
20  
A
C
D
q
JC  
T
C
14  
Steady  
State  
Power Dissipation  
T
C
P
20  
W
A
D
R
(Notes 1, 2, 3)  
q
JC  
G (4)  
T
C
= 100°C  
10  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
7.82  
6.54  
3.0  
2.1  
80  
S (1, 2, 3)  
q
JA  
T = 100°C  
A
(Notes 1 & 3, 4)  
Steady  
State  
Power Dissipation  
T = 25°C  
A
P
W
D
MARKING DIAGRAM  
R
(Notes 1, 3)  
q
JA  
1
T = 100°C  
A
1
S
S
S
G
D
D
D
D
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
XXXX  
AYWWG  
G
WDFN8  
(m8FL)  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
CASE 511AB  
Source Current (Body Diode)  
I
22  
51  
A
S
XXXX = Specific Device Code  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
A
= Assembly Location  
= Year  
Energy (I  
= 1 A)  
L(pk)  
Y
WW  
G
= Work Week  
= Pb−Free Package  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
(Note: Microdot may be in either location)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
package dimensions section on page 5 of this data sheet.  
Parameter  
Symbol  
Value  
7.32  
49  
Unit  
Junction−to−Case − Steady State (Note 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
JC  
JA  
R
q
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
January, 2017 − Rev. 0  
NVTFS5C680NL/D  
 
123456

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