Datasheet > NVTFS5C680NLWFTAG

NVTFS5C680NLWFTAG

更新时间： 2024-11-06 01:11:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	87K
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Power MOSFET

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NVTFS5C680NLWFTAG 数据手册

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NVTFS5C680NL

Power MOSFET

60 V, 26.5 mW, 20 A, Single N−Channel

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

www.onsemi.com

• Low Capacitance to Minimize Driver Losses

• NVTFS5C680NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

MAX

I MAX

(BR)DSS

DS(on)

• These Devices are Pb−Free and are RoHS Compliant

26.5 mW @ 10 V

42.5 mW @ 4.5 V

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

60 V

20 A

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

N−Channel

Gate−to−Source Voltage

D (5 − 8)

Continuous Drain

Current R

(Notes 1, 2, 3, 4)

= 25°C

= 100°C

= 25°C

Steady

State

Power Dissipation

(Notes 1, 2, 3)

G (4)

= 100°C

Continuous Drain

Current R

T = 25°C

7.82

6.54

3.0

2.1

S (1, 2, 3)

T = 100°C

(Notes 1 & 3, 4)

Steady

State

Power Dissipation

T = 25°C

MARKING DIAGRAM

(Notes 1, 3)

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

XXXX

AYWWG

WDFN8

(m8FL)

Operating Junction and Storage Temperature

T , T

−55 to

+175

°C

stg

CASE 511AB

Source Current (Body Diode)

XXXX = Specific Device Code

Single Pulse Drain−to−Source Avalanche

= Assembly Location

= Year

Energy (I

= 1 A)

L(pk)

= Work Week

= Pb−Free Package

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

(Note: Microdot may be in either location)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

package dimensions section on page 5 of this data sheet.

Parameter

Symbol

Value

7.32

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

January, 2017 − Rev. 0

NVTFS5C680NL/D

12 3 4 5 6

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NVTFS6H850NLTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 64A, 8.6mΩ
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NVTFS6H854NLTAG	ONSEMI	获取价格	Single N-Channel Power MOSFET 80V, 48A, 14.5m
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NVTFS6H854NTAG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80V，48A，14.5mΩ
NVTFS6H854NWFTAG	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，80V，48A，14.5mΩ
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