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NVTFS5C658NL

更新时间: 2024-11-26 01:11:07
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安森美 - ONSEMI /
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Power MOSFET

NVTFS5C658NL 数据手册

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NVTFS5C658NL  
Power MOSFET  
60 V, 5.0 mW, 109 A, Single N−Channel  
Features  
Small Footprint (3.3 x 3.3 mm) for Compact Design  
Low R  
to Minimize Conduction Losses  
DS(on)  
www.onsemi.com  
Low Capacitance to Minimize Driver Losses  
NVTFS5C658NLWF − Wettable Flanks Product  
AEC−Q101 Qualified and PPAP Capable  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
5.0 mW @ 10 V  
7.3 mW @ 4.5 V  
These Devices are Pb−Free and are RoHS Compliant  
60 V  
109 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
N−Channel  
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
D (5 − 8)  
V
DSS  
Gate−to−Source Voltage  
Continuous Drain Cur-  
V
20  
V
GS  
T
= 25°C  
= 100°C  
= 25°C  
I
109  
77  
A
C
D
rent R  
3, 4)  
(Notes 1, 2,  
q
JC  
T
C
G (4)  
Steady  
State  
Power Dissipation  
(Notes 1, 2, 3)  
T
C
P
114  
57  
W
A
D
R
q
S (1, 2, 3)  
JC  
T
C
= 100°C  
Continuous Drain Cur-  
T = 25°C  
A
I
18  
D
MARKING DIAGRAM  
rent R  
3, 4)  
(Notes 1 &  
q
JA  
T = 100°C  
A
15  
1
Steady  
State  
1
S
S
S
G
D
D
D
D
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
A
P
3.2  
2.2  
440  
W
D
XXXX  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
R
q
JA  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
XXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Source Current (Body Diode)  
I
S
127  
142  
A
WW  
= Work Week  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
G
= Pb−Free Package  
Energy (I  
= 5.0 A)  
L(pk)  
(Note: Microdot may be in either location)  
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
1.3  
Unit  
Junction−to−Case − Steady State (Note 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
JC  
JA  
R
47  
q
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
January, 2017 − Rev. 0  
NVTFS5C658NL/D