Datasheet > NVTFS5C658NL

NVTFS5C658NL

更新时间： 2024-11-06 01:11:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	83K
描述
Power MOSFET

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NVTFS5C658NL 数据手册

NVTFS5C658NL

Power MOSFET

60 V, 5.0 mW, 109 A, Single N−Channel

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

• Low R

to Minimize Conduction Losses

DS(on)

www.onsemi.com

• Low Capacitance to Minimize Driver Losses

• NVTFS5C658NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

MAX

I MAX

(BR)DSS

DS(on)

5.0 mW @ 10 V

7.3 mW @ 4.5 V

• These Devices are Pb−Free and are RoHS Compliant

60 V

109 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

N−Channel

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

D (5 − 8)

DSS

Gate−to−Source Voltage

Continuous Drain Cur-

= 25°C

= 100°C

= 25°C

109

rent R

3, 4)

(Notes 1, 2,

G (4)

Steady

State

Power Dissipation

(Notes 1, 2, 3)

114

S (1, 2, 3)

= 100°C

Continuous Drain Cur-

T = 25°C

MARKING DIAGRAM

rent R

3, 4)

(Notes 1 &

T = 100°C

Steady

State

Power Dissipation

(Notes 1, 3)

T = 25°C

3.2

2.2

440

XXXX

AYWWG

WDFN8

(m8FL)

CASE 511AB

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

+175

°C

stg

XXXX = Specific Device Code

= Assembly Location

= Year

Source Current (Body Diode)

127

142

= Work Week

Single Pulse Drain−to−Source Avalanche

= Pb−Free Package

Energy (I

= 5.0 A)

L(pk)

(Note: Microdot may be in either location)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

1.3

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

January, 2017 − Rev. 0

NVTFS5C658NL/D

12 3 4 5 6

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