Datasheet > NVTFS5C478NL

NVTFS5C478NL

更新时间： 2024-11-28 02:52:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	208K
描述
MOSFET â Power, Single N-Channel 40 V, 14 m, 26 A

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVTFS5C478NL 数据手册

MOSFET – Power, Single

N-Channel

40 V, 14 mW, 26 A

NVTFS5C478NL

Features

• Small Footprint (3.3 x 3.3 mm) for Compact Design

www.onsemi.com

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• NVTFS5C478NLWF − Wettable Flanks Product

• AEC−Q101 Qualified and PPAP Capable

MAX

I MAX

(BR)DSS

DS(on)

14 mW @ 10 V

25 mW @ 4.5 V

• These Devices are Pb−Free and are RoHS Compliant

40 V

26 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

N−Channel

D (5 − 8)

DSS

Gate−to−Source Voltage

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Notes 1, 2, 3, 4)

Steady

State

G (4)

Power Dissipation

(Notes 1, 2, 3)

= 100°C

S (1, 2, 3)

Continuous Drain

Current R

T = 25°C

T = 100°C

8.0

3.0

2.0

104

(Notes 1, 3, 4)

Steady

State

MARKING DIAGRAM

Power Dissipation

T = 25°C

(Notes 1, 3)

T = 100°C

XXXX

AYWWG

WDFN8

(m8FL)

CASE 511AB

Pulsed Drain Current

T = 25°C, t = 10 ms

Operating Junction and Storage Temperature

T , T

−55 to

+175

°C

stg

XXXX = Specific Device Code

Source Current (Body Diode)

= Assembly Location

= Year

Single Pulse Drain−to−Source Avalanche

= Work Week

= Pb−Free Package

Energy (I

= 1.4 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

(Note: Microdot may be in either location)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)

Parameter

Symbol

Value

8.2

Unit

Junction−to−Case − Steady State (Note 3)

Junction−to−Ambient − Steady State (Note 3)

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as 1

second is higher but is dependent on pulse duration and duty cycle.

Publication Order Number:

September, 2019 − Rev. 2

NVTFS5C478NL/D

12 3 4 5 6 7

中文翻译

下载PDF

与NVTFS5C478NL相关器件

型号	品牌	获取价格	描述	数据表
NVTFS5C478NLTAG	ONSEMI	获取价格	MOSFET â Power, Single N-Channel 40 V, 14 m
NVTFS5C478NLWFTAG	ONSEMI	获取价格	MOSFET â Power, Single N-Channel 40 V, 14 m
NVTFS5C658NL	ONSEMI	获取价格	Power MOSFET
NVTFS5C658NLTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C658NLWFTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C670NL	ONSEMI	获取价格	Power MOSFET
NVTFS5C670NLTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C670NLWFTAG	ONSEMI	获取价格	Power MOSFET
NVTFS5C673NL	ONSEMI	获取价格	Power MOSFET
NVTFS5C673NLTAG	ONSEMI	获取价格	Power MOSFET

与NVTFS5C478NL相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

47
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

NVTFS5C478NL

NVTFS5C478NL 数据手册

与NVTFS5C478NL相关器件

与NVTFS5C478NL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NVTFS5C478NL

NVTFS5C478NL 数据手册

与NVTFS5C478NL相关器件

与NVTFS5C478NL相关文章

您还可以找

您在本页遇到什么问题？