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NVTFS5826NLWFTAG

更新时间： 2024-11-25 12:05:27
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 125K
描述
60 V, 24 m, 20 A, Single N−Channel

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NVTFS5826NLWFTAG 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：,针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：23 weeks风险等级：2.06
配置：Single最大漏极电流 (Abs) (ID)：20 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e3
湿度敏感等级：1最高工作温度：175 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：22 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)Base Number Matches：1

NVTFS5826NLWFTAG 数据手册

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NVTFS5826NL  
Power MOSFET  
60 V, 24 mW, 20 A, Single N−Channel  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
http://onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• NVTFS5826NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
24 mW @ 10 V  
32 mW @ 4.5 V  
• These Devices are Pb−Free and are RoHS Compliant  
60 V  
20 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
60  
Unit  
V
N−Channel  
D (5 − 8)  
V
DSS  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain Cur-  
T
= 25°C  
= 100°C  
= 25°C  
I
20  
A
mb  
D
rent R  
(Notes 1,  
Y
J−mb  
T
mb  
14  
2, 3, 4)  
Steady  
State  
G (4)  
Power Dissipation  
T
mb  
P
22  
W
A
D
R
(Notes 1, 2, 3)  
Y
J−mb  
T
mb  
= 100°C  
11  
S (1, 2, 3)  
Continuous Drain Cur-  
T = 25°C  
I
D
7.6  
5.4  
3.2  
1.6  
127  
A
MARKING DIAGRAM  
rent R  
3, 4)  
(Notes 1 &  
q
JA  
T = 100°C  
A
Steady  
State  
1
1
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
P
W
A
D
S
S
S
G
D
D
D
D
R
q
XXXX  
AYWWG  
G
JA  
WDFN8  
(m8FL)  
CASE 511AB  
T = 100°C  
A
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
XXXX = Specific Device Code  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Source Current (Body Diode)  
I
18  
20  
A
S
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
= Pb−Free Package  
Energy (T = 25°C, V = 24 V, V = 10 V,  
J
DD  
GS  
I
= 20 A, L = 0.1 mH, R = 25 W)  
L(pk)  
G
(Note: Microdot may be in either location)  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Mounting Board (top) − Steady  
State (Note 2 and 3)  
R
6.8  
°C/W  
Y
J−mb  
Junction−to−Ambient − Steady State (Note 3)  
R
47  
q
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
May, 2013 − Rev. 2  
NVTFS5826NL/D  
 
123456

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