NVTFS5826NL
Power MOSFET
60 V, 24 mW, 20 A, Single N−Channel
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Design
• Low R
to Minimize Conduction Losses
DS(on)
http://onsemi.com
• Low Capacitance to Minimize Driver Losses
• NVTFS5826NLWF − Wettable Flanks Product
• AEC−Q101 Qualified and PPAP Capable
V
R
MAX
I MAX
D
(BR)DSS
DS(on)
24 mW @ 10 V
32 mW @ 4.5 V
• These Devices are Pb−Free and are RoHS Compliant
60 V
20 A
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Parameter
Drain−to−Source Voltage
Symbol
Value
60
Unit
V
N−Channel
D (5 − 8)
V
DSS
Gate−to−Source Voltage
V
GS
20
V
Continuous Drain Cur-
T
= 25°C
= 100°C
= 25°C
I
20
A
mb
D
rent R
(Notes 1,
Y
J−mb
T
mb
14
2, 3, 4)
Steady
State
G (4)
Power Dissipation
T
mb
P
22
W
A
D
R
(Notes 1, 2, 3)
Y
J−mb
T
mb
= 100°C
11
S (1, 2, 3)
Continuous Drain Cur-
T = 25°C
I
D
7.6
5.4
3.2
1.6
127
A
MARKING DIAGRAM
rent R
3, 4)
(Notes 1 &
q
JA
T = 100°C
A
Steady
State
1
1
Power Dissipation
(Notes 1, 3)
T = 25°C
P
W
A
D
S
S
S
G
D
D
D
D
R
q
XXXX
AYWWG
G
JA
WDFN8
(m8FL)
CASE 511AB
T = 100°C
A
Pulsed Drain Current
T = 25°C, t = 10 ms
I
DM
A
A
p
Operating Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
XXXX = Specific Device Code
A
Y
WW
G
= Assembly Location
= Year
= Work Week
Source Current (Body Diode)
I
18
20
A
S
Single Pulse Drain−to−Source Avalanche
E
AS
mJ
= Pb−Free Package
Energy (T = 25°C, V = 24 V, V = 10 V,
J
DD
GS
I
= 20 A, L = 0.1 mH, R = 25 W)
L(pk)
G
(Note: Microdot may be in either location)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
260
°C
L
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)
R
6.8
°C/W
Y
J−mb
Junction−to−Ambient − Steady State (Note 3)
R
47
q
JA
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
May, 2013 − Rev. 2
NVTFS5826NL/D