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NVTFS5C454NLWFTAG

更新时间： 2024-09-17 01:11:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 85K
描述
Power MOSFET

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中文翻译

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NVTFS5C454NLWFTAG 技术参数

是否无铅：不含铅生命周期：Active
Reach Compliance Code：not_compliantFactory Lead Time：5 weeks
风险等级：1.49Is Samacsys：N
JESD-609代码：e3湿度敏感等级：1
端子面层：Tin (Sn)Base Number Matches：1

NVTFS5C454NLWFTAG 数据手册

 浏览型号NVTFS5C454NLWFTAG的Datasheet PDF文件第2页浏览型号NVTFS5C454NLWFTAG的Datasheet PDF文件第3页浏览型号NVTFS5C454NLWFTAG的Datasheet PDF文件第4页浏览型号NVTFS5C454NLWFTAG的Datasheet PDF文件第5页浏览型号NVTFS5C454NLWFTAG的Datasheet PDF文件第6页 
NVTFS5C454NL  
Power MOSFET  
40 V, 4.0 mW, 85 A, Single N−Channel  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
www.onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• NVTFS5C454NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
• These Devices are Pb−Free and are RoHS Compliant  
4.0 mW @ 10 V  
6.9 mW @ 4.5 V  
40 V  
85 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
N−Channel  
Gate−to−Source Voltage  
V
GS  
20  
V
D (5 − 8)  
Continuous Drain  
Current R  
(Notes 1, 2, 3, 4)  
T
= 25°C  
= 100°C  
= 25°C  
I
85  
A
C
D
q
JC  
T
C
60  
Steady  
State  
Power Dissipation  
T
C
P
55  
W
A
G (4)  
D
R
(Notes 1, 2, 3)  
q
JC  
T
C
= 100°C  
27  
S (1, 2, 3)  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
20  
q
JA  
T = 100°C  
A
14  
(Notes 1 & 3, 4)  
Steady  
State  
MARKING DIAGRAM  
Power Dissipation  
T = 25°C  
A
P
3.2  
1.6  
520  
W
D
1
R
(Notes 1, 3)  
q
1
JA  
S
S
S
G
D
D
D
D
T = 100°C  
A
XXXX  
AYWWG  
G
WDFN8  
(m8FL)  
CASE 511AB  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
A
A
p
DM  
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
XXXX = Specific Device Code  
Source Current (Body Diode)  
I
61  
A
S
A
= Assembly Location  
= Year  
Y
Single Pulse Drain−to−Source Avalanche  
E
AS  
202  
mJ  
Energy (I  
= 5 A)  
WW  
= Work Week  
L(pk)  
G
= Pb−Free Package  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
(Note: Microdot may be in either location)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 5 of this data sheet.  
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)  
Parameter  
Symbol  
Value  
2.7  
Unit  
Junction−to−Case − Steady State (Note 3)  
Junction−to−Ambient − Steady State (Note 3)  
R
°C/W  
q
JC  
JA  
R
47  
q
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Psi (Y) is used as required per JESD51−12 for packages in which  
substantially less than 100% of the heat flows to single case surface.  
2
3. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
4. Continuous DC current rating. Maximum current for pulses as long as 1  
second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
February, 2017 − Rev. 2  
NVTFS5C454NL/D  
 
123456

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