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NVTFS5C453NLTAG PDF预览

NVTFS5C453NLTAG

更新时间： 2024-11-10 01:11:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 88K
描述
Power MOSFET

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NVTFS5C453NLTAG 数据手册

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NVTFS5C453NL  
Power MOSFET  
40 V, 3.1 mW, 107 A, Single N−Channel  
Features  
• Small Footprint (3.3 x 3.3 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
www.onsemi.com  
• Low Capacitance to Minimize Driver Losses  
• NVTFS5C453NLWF − Wettable Flanks Product  
• AEC−Q101 Qualified and PPAP Capable  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• These Devices are Pb−Free and are RoHS Compliant  
3.1 mW @ 10 V  
5.2 mW @ 4.5 V  
40 V  
107 A  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
D (5)  
Gate−to−Source Voltage  
V
GS  
20  
V
Continuous Drain  
Current R  
(Notes 1, 3)  
T
= 25°C  
= 100°C  
= 25°C  
I
107  
75  
A
C
D
q
JC  
T
C
Steady  
State  
G (4)  
Power Dissipation  
T
C
P
68  
W
A
D
R
(Note 1)  
q
JC  
T
C
= 100°C  
34  
S (1,2,3)  
N−CHANNEL MOSFET  
Continuous Drain  
Current R  
T = 25°C  
A
I
D
23  
q
JA  
T = 100°C  
A
16  
(Notes 1, 2, 3)  
Steady  
State  
MARKING  
DIAGRAM  
Power Dissipation  
T = 25°C  
A
P
3.3  
1.6  
740  
W
D
R
(Notes 1 & 2)  
q
JA  
T = 100°C  
A
1
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
A
1
S
S
S
D
D
D
D
A
p
XXXX  
AYWWG  
G
Operating Junction and Storage Temperature  
T , T  
−55 to  
+175  
°C  
J
stg  
WDFN8  
(m8FL)  
CASE 511AB  
G
Source Current (Body Diode)  
I
S
76  
A
Single Pulse Drain−to−Source Avalanche  
E
215  
mJ  
AS  
XXXX = Specific Device Code  
Energy (I  
= 7 A)  
L(pk)  
A
Y
= Assembly Location  
= Year  
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
WW  
G
= Work Week  
= Pb−Free Package  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
(Note: Microdot may be in either location)  
THERMAL RESISTANCE MAXIMUM RATINGS  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information on  
page 5 of this data sheet.  
Parameter  
Symbol  
Value  
2.2  
Unit  
Junction−to−Case − Steady State  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
JC  
JA  
R
46  
q
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
February, 2017 − Rev. 1  
NVTFS5C453NL/D  
 
123456

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