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NVHL020N120SC1 PDF预览

NVHL020N120SC1

更新时间： 2024-11-06 11:15:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 301K
描述
Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L

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NVHL020N120SC1 数据手册

 浏览型号NVHL020N120SC1的Datasheet PDF文件第2页浏览型号NVHL020N120SC1的Datasheet PDF文件第3页浏览型号NVHL020N120SC1的Datasheet PDF文件第4页浏览型号NVHL020N120SC1的Datasheet PDF文件第5页浏览型号NVHL020N120SC1的Datasheet PDF文件第6页浏览型号NVHL020N120SC1的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
MOSFET – 20 mohm,  
1200ꢀV, M1, TO-247-3L  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
1200 V  
28 mꢀ @ 20 V  
103 A  
N−CHANNEL MOSFET  
NVHL020N120SC1  
Features  
D
• Typ. R  
= 20 mꢀ  
• Ultra Low Gate Charge (typ. Q  
DS(on)  
= 203 nC)  
G(tot)  
• Low Effective Output Capacitance (typ. C = 260 pF)  
oss  
G
• 100% UIL Tested  
• AEC−Q101 Qualified and PPAP Capable  
S
• This Device is Halide Free and RoHS Compliant with exemption 7a,  
Pb−Free 2LI (on second level interconnection)  
Typical Applications  
• Automotive On Board Charger  
• Automotive DC−DC converter for EV/HEV  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G
D
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
Unit  
S
TO−247−3LD  
CASE 340CX  
V
DSS  
1200  
−15/+25  
−5/+20  
V
V
V
Gate−to−Source Voltage  
V
GS  
Recommended Opera-  
tion Values of Gate−to−  
Source Voltage  
T
C
< 175°C  
V
GSop  
MARKING DIAGRAM  
Continuous Drain  
Current R  
Steady  
State  
T
C
= 25°C  
I
D
103  
A
ꢁ
JC  
Power Dissipation R  
P
I
535  
73  
W
A
ꢁ
D
JC  
JC  
$Y&Z&3&K  
NVHL020  
N120SC1  
Continuous Drain  
Current R  
Steady  
State  
T
= 100°C  
C
D
ꢁ
JC  
Power Dissipation R  
P
D
267  
412  
W
A
ꢁ
Pulsed Drain Current  
(Note 2)  
T = 25°C  
A
I
DM  
Single Pulse Surge Drain T = 25°C, t = 10 ꢂ s,  
I
807  
A
A
p
DSC  
Current Capability  
R
= 4.7  
ꢀ
G
$Y  
= onsemi Logo  
&Z  
&3  
&K  
= Assembly Plant Code  
= Data Code (Year & Week)  
= Lot  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
°C  
J
stg  
+175  
Source Current (Body Diode)  
I
S
54  
A
NVHL020N120SC1 = Specific Device Code  
Single Pulse Drain−to−Source Avalanche  
E
AS  
264  
mJ  
Energy (I  
= 23 A, L = 1 mH) (Note 3)  
L(pk)  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
Device  
Package  
Shipping  
30 Units /  
Tube  
TO247−3L  
NVHL020N120SC1  
THERMAL RESISTANCE MAXIMUM RATINGS  
Parameter  
Junction−to−Case (Note 1)  
Junction−to−Ambient (Note 1)  
Symbol  
Value  
0.28  
40  
Unit  
°C/W  
°C/W  
R
ꢁ
JC  
R
ꢁ
JA  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Repetitive rating, limited by max junction temperature.  
3. E of 264 mJ is based on starting T = 25°C; L = 1 mH, I = 23 A,  
AS  
DD  
J
AS  
V
= 120 V, V = 18 V.  
GS  
© Semiconductor Components Industries, LLC, 2018  
1
Publication Order Number:  
May, 2022 − Rev. 1  
NVHL020N120SC1/D  
 
1234567

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