Datasheet > NVHL080N120SC1

NVHL080N120SC1

更新时间： 2024-11-24 11:14:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	360K
描述
碳化硅 MOSFET，N 沟道，1200 V，80 mΩ，TO247−3L

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NVHL080N120SC1 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

MOSFET – 80 mohm,

1200ꢀV, M1, TO-247-3L

MAX

I MAX

(BR)DSS

DS(on)

1200 V

110 mW @ 20 V

31 A

N−CHANNEL MOSFET

NVHL080N120SC1

Features

• Typ. R

= 80 mW

• Ultra Low Gate Charge (typ. Q

DS(on)

= 56 nC)

G(tot)

• Low Effective Output Capacitance (typ. C = 80 pF)

oss

• 100% UIL Tested

• AEC−Q101 Qualified and PPAP Capable

• This Device is Halide Free and RoHS Compliant with exemption 7a,

Pb−Free 2LI (on second level interconnection)

Typical Applications

• Automotive On Board Charger

• Automotive DC−DC converter for EV/HEV

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

TO−247−3LD

CASE 340CX

DSS

1200

−15/+25

−5/+20

Gate−to−Source Voltage

Recommended Opera-

tion Values of Gate−to−

Source Voltage

< 175°C

GSop

MARKING DIAGRAM

Continuous Drain

Current R

Steady

State

= 25°C

Power Dissipation R

178

$Y&Z&3&K

NVHL080

N120SC1

Continuous Drain

Current R

Steady

State

= 100°C

Power Dissipation R

Pulsed Drain Current

(Note 2)

T = 25°C

132

Single Pulse Surge Drain T = 25°C, t = 10 ms,

132

DSC

Current Capability

= 4.7 W

= onsemi Logo

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

= Assembly Plant Code

= Data Code (Year & Week)

= Lot

+175

Source Current (Body Diode)

NVHL080N120SC1 = Specific Device Code

Single Pulse Drain−to−Source Avalanche

171

Energy (I

= 18.5 A, L = 1 mH) (Note 3)

L(pk)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

Device

Package

Shipping

THERMAL RESISTANCE MAXIMUM RATINGS

30 Units /

Tube

TO247−3L

NVHL080N120SC1

Parameter

Junction−to−Case (Note 1)

Junction−to−Ambient (Note 1)

Symbol

Value

0.84

Unit

°C/W

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Repetitive rating, limited by max junction temperature.

3. E of 171 mJ is based on starting T = 25°C; L = 1 mH, I = 18.5 A,

= 120 V, V = 18 V.

Publication Order Number:

May, 2022 − Rev. 4

NVHL080N120SC1/D

12 3 4 5 6 7

中文翻译

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与NVHL080N120SC1相关器件

型号	品牌	获取价格	描述	数据表
NVHL080N120SC1A	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET, N‐Channel - Eli
NVHL082N65S3F	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，SUPERFET® III，FRFET®，650 V，4
NVHL082N65S3HF	ONSEMI	获取价格	Single N-Channel Power MOSFET SUPERFET® III,
NVHL095N65S3F	ONSEMI	获取价格	SUPERFET III MOSFET, 36A, 95mΩ, 650V in TO-24
NVHL095N65S3HF	ONSEMI	获取价格	SUPERFET III MOSFET, 650V, 95mΩ, 36A FRFET fa
NVHL110N65S3F	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，SUPERFET® III，FRFET®，650 V，3
NVHL110N65S3HF	ONSEMI	获取价格	Single N-Channel Power MOSFET SUPERFET® III,
NVHL160N120SC1	ONSEMI	获取价格	Silicon Carbide (SiC) MOSFET, N‐Channel - Eli
NVIS1D9N04CTXX	ONSEMI	获取价格	Power Field-Effect Transistor
NVJD4152P	ONSEMI	获取价格	Trench Small Signal MOSFET

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