Datasheet > NVLJD4007NZTAG

NVLJD4007NZTAG

更新时间： 2024-11-19 12:28:35

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
6页	132K
描述
30 V, 245 mA, Dual, NâChannel, Gate ESD Protection, 2x2 WDFN Package

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中文翻译

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NVLJD4007NZTAG 数据手册

NVLJD4007NZ

Small Signal MOSFET

30 V, 245 mA, Dual, N−Channel, Gate ESD

Protection, 2x2 WDFN Package

http://onsemi.com

Features

• Optimized Layout for Excellent High Speed Signal Integrity

• Low Gate Charge for Fast Switching

• Small 2 x 2 mm Footprint

I MAX

(Note 1)

DS(on)

Typ @ V

(BR)DSS

1.4 W @ 4.5 V

2.3 W @ 2.5 V

30 V

245 mA

• ESD Protected Gate

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

D (6)

D (4)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

G (2)

G (5)

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

S (1)

N−Channel

S (3)

N−Channel

Gate−to−Source Voltage

"10

245

Continuous Drain

Current (Note 1)

Steady State = 25°C

MARKING

DIAGRAM

Power Dissipation

(Note 1)

755

1.2

WDFN6

CASE 506AN

JGG

Pulsed Drain Current

v 10 ms

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

JG = Specific Device Code

= Date Code

= Pb−Free Package

Continuous Source Current (Body Diode)

245

260

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

(Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

PIN CONNECTIONS

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 1)

166

°C/W

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

(Top View)

ORDERING INFORMATION

†

Device

Package

Shipping

NVLJD4007NZTAG

WDFN6

(Pb−Free)

3000/Tape &

Reel

NVLJD4007NZTBG

WDFN6

(Pb−Free)

3000/Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

May, 2013 − Rev. 0

NVLJD4007NZ/D

12 3 4 5 6

中文翻译

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与NVLJD4007NZTAG相关器件

型号	品牌	获取价格	描述	数据表
NVLJD4007NZTBG	ONSEMI	获取价格	30 V, 245 mA, Dual, NâChannel, Gate ESD Pro
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NVLJWS011N04CLTAG	ONSEMI	获取价格	Single N−Channel µCool™ Power MOSFET 40V 37A
NVLJWS011N06CLTAG	ONSEMI	获取价格	Single N−Channel wDFNW6 Power MOSFET 60 V, 48
NVLJWS013N03CLTAG	ONSEMI	获取价格	Single N−Channel µCool™ Power MOSFET 30V, 8.2
NVLJWS022N06CLTAG	ONSEMI	获取价格	Single N−Channel µCool™ Power MOSFET 60 V, 25
NVLJWS070N06CLTAG	ONSEMI	获取价格	Single N−Channel µCool™ Power MOSFET 60 V, 62
NVLJWS5D0N03CLTAG	ONSEMI	获取价格	Single N−Channel Power MOSFET 30V 77A 4.2 mΩ

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