5秒后页面跳转
捷配首页

Datasheet > NVJS3151P
NVJS3151P PDF预览

NVJS3151P

更新时间： 2024-11-10 01:16:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 73K
描述
Trench Power MOSFET

阅读下载

中文翻译

获取价格

NVJS3151P 数据手册

 浏览型号NVJS3151P的Datasheet PDF文件第2页浏览型号NVJS3151P的Datasheet PDF文件第3页浏览型号NVJS3151P的Datasheet PDF文件第4页浏览型号NVJS3151P的Datasheet PDF文件第5页 
NTJS3151P, NVJS3151P  
Trench Power MOSFET  
12 V, 3.3 A, Single P−Channel,  
ESD Protected SC−88  
Features  
www.onsemi.com  
• Leading Trench Technology for Low R  
Extending Battery Life  
DS(ON)  
• SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)  
• Gate Diodes for ESD Protection  
V
R
Typ  
I Max  
D
(BR)DSS  
DS(on)  
45 mW @ −4.5 V  
67 mW @ −2.5 V  
• NV Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
−12 V  
−3.3 A  
133 mW @ −1.8 V  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
SC−88 (SOT−363)  
Applications  
D
D
1
2
3
6
D
D
S
• High Side Load Switch  
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs  
5
4
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value Units  
G
V
−12  
12  
V
V
A
DSS  
Gate−to−Source Voltage  
V
GS  
Top View  
D
Continuous Drain  
Current (Note 1)  
Steady T = 25 °C  
State  
I
−2.7  
−2.0  
−3.3  
0.625  
A
D
T = 85 °C  
A
3 kW  
t ≤ 5 s  
T = 25 °C  
A
G
Power Dissipation  
(Note 1)  
Steady T = 25 °C  
State  
P
W
A
D
Pulsed Drain Current  
t = 10 ms  
p
I
−8.0  
A
DM  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
S
T
STG  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Source Current (Body Diode)  
I
−0.8  
260  
A
S
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
°C  
T
L
D
D
S
6
1
THERMAL RESISTANCE RATINGS (Note 1)  
XXX MG  
Parameter  
Symbol  
Max  
200  
141  
102  
Units  
SC−88/SOT−363  
CASE 419B  
STYLE 28  
G
Junction−to−Ambient – Steady State  
Junction−to−Ambient − t ≤ 5 s  
Junction−to−Lead – Steady State  
R
°C/W  
q
q
JA  
JA  
1
R
D
D
G
R
q
JL  
XXX  
M
G
= Device Code  
= Date Code  
= Pb−Free Package  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Surface mounted on FR4 board using 1 in sq pad size  
(Note: Microdot may be in either location)  
(Cu area = 1.127 in sq [1 oz] including traces).  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
June, 2016 − Rev. 4  
NTJS3151/D  
 
12345

中文翻译

下载PDF

与NVJS3151P相关器件

型号 品牌 获取价格 描述 数据表
NVJS3151PT1G ONSEMI

获取价格

 		Trench Power MOSFET
NVJS4151PT1G ONSEMI

获取价格

 		单 P 沟道，沟槽功率 MOSFET，-20V，-4.1A，67mΩ
NVJS4405NT1G ONSEMI

获取价格

 		Single N-Channel Small Signal MOSFET 25V, 1.2
NVL74HC240ADWG ONSEMI

获取价格

 		Octal 3-State Inverting Buffer/Line Driver/Line Receiver
NVL74HC240ADWR2G ONSEMI

获取价格

 		Octal 3-State Inverting Buffer/Line Driver/Line Receiver
NVLJD4007NZ ONSEMI

获取价格

 		30 V, 245 mA, Dual, N−Channel, Gate ESD Pro
NVLJD4007NZTAG ONSEMI

获取价格

 		30 V, 245 mA, Dual, N−Channel, Gate ESD Pro
NVLJD4007NZTBG ONSEMI

获取价格

 		30 V, 245 mA, Dual, N−Channel, Gate ESD Pro
NVLJS053N12MCLTAG ONSEMI

获取价格

 		Power, Single, N-Channel, Shielded Gate, Powe
NVLJWD023N04CLTAG ONSEMI

获取价格

 		Single N−Channel µCool™ Power MOSFET 40V 25A 

与NVJS3151P相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证